Study on the quaternary unipolar barrier in metamorphic InGaAs photodetectors

IF 4.6 2区物理与天体物理 Q1 OPTICS

Optics and Laser Technology Pub Date : 2025-07-19 DOI:10.1016/j.optlastec.2025.113613

Zhejing Jiao , Tianyu Guo , Gaoyu Zhou , Yi Gu , Bowen Liu , Chunlei Yu , Tao Li , Xue Li

{"title":"Study on the quaternary unipolar barrier in metamorphic InGaAs photodetectors","authors":"Zhejing Jiao , Tianyu Guo , Gaoyu Zhou , Yi Gu , Bowen Liu , Chunlei Yu , Tao Li , Xue Li","doi":"10.1016/j.optlastec.2025.113613","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, the performance of a lattice-mismatched metamorphic In<sub>0.83</sub>Ga<sub>0.17</sub>As/InP photodetector with an AlGaAsSb quaternary barrier layer is studied by simulation and compared with that of the photodetector without the barrier layer. By selecting proper elemental compositions, high conduction band offset and zero valence band offset can be obtained. The position and structural parameters of the barrier are analyzed and optimized based on the analysis of energy-band diagram, dark current, quantum efficiency and detectivity at the temperature of 200 K. By placing the barrier at the edge of the depletion region within the absorption layer, and taking the thickness of 0.1 μm, the dark current has about two orders of magnitude reduction and the detectivity has about one order of magnitude increase without compromising quantum efficiency, compared to those without the barrier layer. The results demonstrate that the AlGaAsSb quaternary alloy can serve as an effective unipolar barrier for the In<sub>0.83</sub>Ga<sub>0.17</sub>As/InP photodetector to greatly enhance its performance at 200 K. The barrier structure could be well applied to InGaAs/InP photodetectors for extended short wavelength infrared range.</div></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":"192 ","pages":"Article 113613"},"PeriodicalIF":4.6000,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030399225012046","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 0

Abstract

In this work, the performance of a lattice-mismatched metamorphic In_0.83Ga_0.17As/InP photodetector with an AlGaAsSb quaternary barrier layer is studied by simulation and compared with that of the photodetector without the barrier layer. By selecting proper elemental compositions, high conduction band offset and zero valence band offset can be obtained. The position and structural parameters of the barrier are analyzed and optimized based on the analysis of energy-band diagram, dark current, quantum efficiency and detectivity at the temperature of 200 K. By placing the barrier at the edge of the depletion region within the absorption layer, and taking the thickness of 0.1 μm, the dark current has about two orders of magnitude reduction and the detectivity has about one order of magnitude increase without compromising quantum efficiency, compared to those without the barrier layer. The results demonstrate that the AlGaAsSb quaternary alloy can serve as an effective unipolar barrier for the In_0.83Ga_0.17As/InP photodetector to greatly enhance its performance at 200 K. The barrier structure could be well applied to InGaAs/InP photodetectors for extended short wavelength infrared range.

查看原文本刊更多论文

变质InGaAs光电探测器中第四元单极势垒的研究

本文通过模拟研究了具有AlGaAsSb四元势垒层的晶格失配变质In0.83Ga0.17As/InP光电探测器的性能，并与没有势垒层的光电探测器进行了比较。通过选择合适的元素组成，可以获得高导带偏移和零价带偏移。通过对200 K温度下的能带图、暗电流、量子效率和探测率的分析，对势垒的位置和结构参数进行了分析和优化。在吸收层内耗尽区边缘放置势垒，厚度为0.1 μm，在不影响量子效率的情况下，暗电流降低了约2个数量级，探测率提高了约1个数量级。结果表明，AlGaAsSb四元合金可以作为In0.83Ga0.17As/InP光电探测器的有效单极势垒，在200 K时大大提高了其性能。该势垒结构可以很好地应用于InGaAs/InP光电探测器，用于延长短波红外范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Optics and Laser Technology 物理-光学

CiteScore

8.50

自引率

10.00%

发文量

1060

审稿时长

3.4 months

期刊介绍： Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication. The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas: •development in all types of lasers •developments in optoelectronic devices and photonics •developments in new photonics and optical concepts •developments in conventional optics, optical instruments and components •techniques of optical metrology, including interferometry and optical fibre sensors •LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow •applications of lasers to materials processing, optical NDT display (including holography) and optical communication •research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume) •developments in optical computing and optical information processing •developments in new optical materials •developments in new optical characterization methods and techniques •developments in quantum optics •developments in light assisted micro and nanofabrication methods and techniques •developments in nanophotonics and biophotonics •developments in imaging processing and systems