Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-07-14 DOI:10.1002/aelm.202500159

Keval Hadiyal, Ramakrishnan Ganesan, R. Thamankar

{"title":"Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching","authors":"Keval Hadiyal, Ramakrishnan Ganesan, R. Thamankar","doi":"10.1002/aelm.202500159","DOIUrl":null,"url":null,"abstract":"Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi‐functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve nanoscale conduction paths can show quantum effects at room temperature. Here, Mn3O4 nanowires based memristor showing very reliable resistive switching at very low voltages and with ON/OFF States ratio ∼ 103 is reported. The switching device can also be programmed to multiple memory states (up to 16 states ∼ 24). Since the conduction paths are geometrically constrained along the nanowires, quantized conductance steps are observed. Step‐wise conductance jumps are observed during the SET and RESET process with better control along RESET process. Conductance jumps range between 1 and 9 G0. The nanowire devices show very consistent resistive switching up to 100 °C. These measurements confirm extremely stable nanowire based resistive switching devices which can be used for next‐generation memories showing quantum effects in neuromorphic computing architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500159","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi‐functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve nanoscale conduction paths can show quantum effects at room temperature. Here, Mn3O4 nanowires based memristor showing very reliable resistive switching at very low voltages and with ON/OFF States ratio ∼ 103 is reported. The switching device can also be programmed to multiple memory states (up to 16 states ∼ 24). Since the conduction paths are geometrically constrained along the nanowires, quantized conductance steps are observed. Step‐wise conductance jumps are observed during the SET and RESET process with better control along RESET process. Conductance jumps range between 1 and 9 G0. The nanowire devices show very consistent resistive switching up to 100 °C. These measurements confirm extremely stable nanowire based resistive switching devices which can be used for next‐generation memories showing quantum effects in neuromorphic computing architectures.

查看原文本刊更多论文

Mn3O4纳米线网络器件的量子化电导和多电平存储操作与低压操作和氧空位感应电阻开关相结合

纳米线和纳米器件中的量子效应可能会对未来技术的多功能器件概念产生革命性的影响。从高阻态到低阻态的忆阻器件采用纳米级的传导路径，在室温下表现出量子效应。在这里，基于Mn3O4纳米线的忆阻器在非常低的电压下显示出非常可靠的电阻开关，并且ON/OFF状态比为103。开关器件也可以被编程为多个存储状态（多达16 ~ 24个状态）。由于沿纳米线的传导路径受到几何约束，因此可以观察到量子化的传导阶跃。在SET和RESET过程中观察到逐步电导跳变，在RESET过程中具有更好的控制。电导跳变范围在1和9g0之间。纳米线器件在高达100°C的温度下显示出非常一致的电阻开关。这些测量结果证实，基于纳米线的电阻开关器件非常稳定，可用于下一代存储器，在神经形态计算架构中显示量子效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.