Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-07-14 DOI:10.1002/aelm.202500137

Yoon‐Seo Kim, Hyeon Woo Kim, Taewon Hwang, Jinho Ahn, Sung Beom Cho, Jin‐Seong Park

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Abstract

Owing to the challenges of downsizing and reducing power consumption in the semiconductor industry, oxide semiconductors such as indium‐gallium‐zinc‐oxide (IGZO) are emerging as notable alternative materials due to their compatibility with back‐end‐of‐line processes and low leakage currents. However, enhancing electrical characteristics of oxide semiconductors to match silicon‐based channels remains crucial. In this study, atomically‐ordered (AO) IGZO is first synthesized using plasma‐enhanced atomic layer deposition, resulting in a transistor with a field‐effect mobility of 245 cm2 Vs−1 and excellent switching properties (threshold voltage = 0.17 V, subthreshold swing <75 mV dec−1) in a low thermal budget process (below 250 °C). Theoretical and experimental studies revealed that the ultra‐high mobility originates from the carrier quantum confinement induced by the multi‐quantum well structure of AO‐IGZO. Our approach highlights the potential of oxide semiconductors to surpass limitations of silicon‐based technology limitations, thereby paving the way for next‐generation channel materials.

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通过原子层沉积的超高迁移率原子有序InGaZnO晶体管

由于半导体行业面临着小型化和降低功耗的挑战，氧化物半导体，如铟镓锌氧化物（IGZO），由于其与后端工艺和低漏电流的兼容性，正成为值得注意的替代材料。然而，提高氧化物半导体的电学特性以匹配硅基通道仍然至关重要。在这项研究中，原子有序（AO） IGZO首次通过等离子体增强原子层沉积合成，得到了在低热平衡过程（低于250°C）下具有245 cm2 Vs - 1场效应迁移率和优异开关性能（阈值电压= 0.17 V，亚阈值摆幅<；75 mV dec - 1）的晶体管。理论和实验研究表明，AO - IGZO的超高迁移率源于AO - IGZO的多量子阱结构引起的载流子量子限制。我们的方法强调了氧化物半导体超越硅基技术限制的潜力，从而为下一代通道材料铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.