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Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-06-20 DOI:10.1109/JEDS.2025.3581677

Chinmayi Adoni;Sandeep Semwal;Manish Gupta;Jean-Pierre Raskin;Abhinav Kranti

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引用次数: 0

Abstract

The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R

${}_{\text {2-IG-LVT}}$

, R

${}_{\text {1-IG-Ambi}}$

, R

${}_{\text {3-IG-LVT}}$

, and R

${}_{\text {2-IG-HVT}}$

). The electrical connections through two program gates (PG) and one control gate (CG) in 3G-RFET supports the implementation of configurations suitable for low-VTH (R

${}_{\text {2-IG-LVT}}$

and R

${}_{\text {3-IG-LVT}}$

) and high-VTH (R

${}_{\text {2-IG-HVT}}$

), phase follower/reversal (R

${}_{\text {2-IG-LVT}}$

), frequency doubler (R

${}_{\text {1-IG-Ambi}}$

), high gain (R

${}_{\text {3-IG-LVT}}$

), lower parasitic capacitance (R

${}_{\text {2-IG-LVT}}$

and R

${}_{\text {3-IG-LVT}}$

), and higher linearity (R

${}_{\text {3-IG-LVT}}$

) applications. Results showcase electrical tunability as an opportunity to realize many analog/RF features–in–one nanoscale 3G-RFET.

查看原文本刊更多论文

模拟/射频应用中3门可重构晶体管的电可调性

通过四种不同的配置（R ${}_{\text {2-IG-LVT}}$、R ${}_{\text {1-IG-Ambi}}$、R ${}_{\text {3-IG-LVT}}$和R ${}_{\text {2-IG-HVT}}$），研究了用于模拟/RF应用的3门控（3G）可重构场效应晶体管（RFET）的电可调谐电位。在3G-RFET中，通过两个程序门（PG）和一个控制门（CG）的电气连接支持实现适合低vth （R ${}_{\text {2-IG-LVT}}$和R ${}_{\text {3-IG-LVT}}$）和高vth （R ${}_{\text {2-IG-LVT}}$）、相位跟踪/反转（R ${}_{\text {1- ig - lvt}}$）、倍频器（R ${}_{\text {1-IG-Ambi}}$）、高增益（R ${}_{\text {3-IG-LVT}}$）、较低的电容（R ${}_{\text {2-IG-LVT}}$和R ${}} {\text {3-IG-LVT}}$）、和更高线性度（R ${}_{\text {3-IG-LVT}}$）应用。结果表明，电可调性是实现许多模拟/射频功能于一体的纳米级3G-RFET的机会。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.