Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-06-27 DOI:10.1109/JEDS.2025.3583931

Hyeon-Seo Do;Ik-Jyae Kim;Jiwoung Choi;Jang-Sik Lee

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引用次数: 0

Abstract

This study investigates the role of positively charged oxygen vacancies in the central region of ferroelectric capacitors and their impact on fatigue. It has been found that, during fatigue, positively charged oxygen vacancies accumulate in the central region, leading to significant degradation in device performance. The application of a high-voltage recovery pulse effectively reverses the charge state of these vacancies from positive to neutral and redistributes them uniformly across the device, restoring its performance. This recovery process is analogous to the ‘wake-up’ state of the device, demonstrating its potential to restore electrical performance. The results of this study emphasize the importance of controlling the charge state and distribution of oxygen vacancies in the central region to enhance the durability and functionality of ferroelectric devices. This work provides a pathway for the broader and more effective application of ferroelectric materials in advanced semiconductor devices.

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揭示铪铁电电容器疲劳的起源

本文研究了带正电的氧空位在铁电电容器中部的作用及其对疲劳的影响。研究发现，在疲劳过程中，带正电的氧空位在中心区域积累，导致器件性能显著下降。高压恢复脉冲的应用有效地将这些空位的电荷状态从正电荷逆转为中性电荷，并将它们均匀地重新分布在器件上，从而恢复其性能。这个恢复过程类似于设备的“唤醒”状态，展示了其恢复电气性能的潜力。本研究结果强调了控制中心区域氧空位的电荷状态和分布对于提高铁电器件的耐用性和功能性的重要性。这项工作为铁电材料在先进半导体器件中更广泛、更有效的应用提供了一条途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.