A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Sungjin Kim;Jeonghyun Lee;Yoonse Cho;Jintae Kim;Jaehyouk Choi;Heein Yoon
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引用次数: 0

Abstract

This letter presents a 7-bit pipelined subranging ADC that integrates a 3-bit flash ADC with a ring VCO-based quantizer. A resistor-ladder-based residue shifter (RLRS) replaces traditional residue amplifiers, efficiently shifting the residue voltage into the most linear region of the $K_{\textrm {VCO}}$ , thereby eliminating the need for post-linearity calibration. Fabricated in a 28-nm FDSOI process, the ADC occupies an area of 0.009 mm2 and achieves an SNDR of 39.26 dB and an SFDR of 48.01 dB at 2.5 GS/s, while consuming 6.5 mW of power. This results in a Walden FOM of 34.6 fJ/conversion step.
基于残差移位技术的6.2b-ENOB 2.5 GS/s flash - vco邻域ADC
本文介绍了一种7位流水线分位ADC,它集成了一个3位闪存ADC和一个基于环形vco的量化器。基于电阻梯的剩余移位器(RLRS)取代了传统的剩余放大器,有效地将剩余电压转移到$K_{\textrm {VCO}}$的最线性区域,从而消除了线性后校准的需要。该ADC采用28纳米FDSOI工艺制造,面积为0.009 mm2,在2.5 GS/s下SNDR为39.26 dB, SFDR为48.01 dB,功耗为6.5 mW。这导致瓦尔登FOM为34.6 fJ/转换步长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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