Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-06-30 DOI:10.1002/aelm.202500231

Chen‐Han Chou, Han‐Yi Huang, Hsin‐Yuan Chiu, Guan‐Zhen Wu, Bo‐Heng Liu, Chien‐Wei Chen, Chi‐Chung Kei, Chao‐Hsin Chien

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Abstract

Doping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT) leakage. In this work, the n‐type doping of CNTs is investigated using aluminum nitride (AlN) as the dopant material and present a tunable doping approach by incorporating various screening dielectric layers between CNTs and AlN. It is confirmed that the screening effect is the dominant factor governing doping strength and demonstrates tunable doping levels ranging from 0.26 to 0.89 nm−1 by varying the screening materials and thickness. Furthermore, through the Wentzel–Kramers–Brillouin (WKB) approximation method, as the extension doping strength weakened from 0.75 to 0.45 nm−1, the BTBT leakage current can be reduced from 19 to 1.2 nA/CNT, offering significant potential for future carbon‐based electronics.

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碳纳米管晶体管中介电屏蔽层可调掺杂

掺杂是实现高性能碳纳米管（CNT）金属氧化物半导体场效应晶体管（mosfet）的关键技术。然而，在延伸区过量掺杂会导致明显的带间隧穿（BTBT）泄漏。本文以氮化铝（AlN）为掺杂材料，研究了碳纳米管的n型掺杂，并通过在碳纳米管和AlN之间掺入各种筛选介质层，提出了一种可调掺杂方法。结果表明，筛分效应是决定掺杂强度的主要因素，通过改变筛分材料和厚度，可以在0.26 ~ 0.89 nm−1范围内调节掺杂水平。此外，通过WKB近似方法，当扩展掺杂强度从0.75减弱到0.45 nm - 1时，BTBT的泄漏电流可以从19 nA/CNT降低到1.2 nA/CNT，为未来的碳基电子产品提供了巨大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.