Alban Degezelle, Razvan Burcea, Pascale Gemeiner, Maxime Vallet, Brahim Dkhil, Stéphane Fusil, Vincent Garcia, Sylvia Matzen, Philippe Lecoeur, Thomas Maroutian
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引用次数: 0
Abstract
Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance at the local scale of several effects playing a key role, i.e., piezoelectricity linked to strain, and flexoelectricity arising from strain gradients. To weigh their respective contributions for a given membrane geometry, the strain profile has to be mapped with respect to the ferroelectric polarization landscape, a necessary step to allow for a controlled tailoring of the latter. In this study, the effect of bending strain on a Pb(Zr,Ti)O3 membrane is examined in a fold‐like structure, observing a polarization rotation from out‐of‐plane to in‐plane at the fold apex. Combining piezoresponse force microscopy, Raman spectroscopy, and scanning transmission electron microscopy, the ferroelectric polarization direction is mapped relative to the height profile of the membrane and the contributions of strain and strain gradients for this archetypal fold geometry are discussed. These findings offer new insights into strain‐engineered polarization configurations and emphasize strain effects at the nanoscale to tune the functional properties in freestanding membranes beyond conventional electrical methods.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.