A Two‐Step Annealing Treatment Method for InAlZnO Transistors Toward 3D Integration

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-06-26 DOI:10.1002/aelm.202500286

Jingye Xie, Qinyuan Wang, Junchen Dong, Dedong Han, Xing Zhang

{"title":"A Two‐Step Annealing Treatment Method for InAlZnO Transistors Toward 3D Integration","authors":"Jingye Xie, Qinyuan Wang, Junchen Dong, Dedong Han, Xing Zhang","doi":"10.1002/aelm.202500286","DOIUrl":null,"url":null,"abstract":"A two‐step thermal annealing treatment strategy is proposed to enhance the electrical performance of the InAlZnO (IAZO) transistors, where the devices are initially pre‐annealing at 400 °C for 30 min, followed by a second annealing step across a wide temperature range of 200–500 °C. The optimized IAZO transistors exhibit excellent electrical properties, including a field‐effect mobility of 59.31 cm2 V−1 s−1, a subthreshold swing of 68.56 mV per decade, a turn‐on voltage of −0.74 V, an off‐state current below 100 pA, and an on‐to‐off current ratio over 107. The devices show excellent bias stress stability and thermal stability as well. By Hall measurement, X‐ray photoelectron spectroscopy, and atomic force microscopy characterization analysis, it is found that two‐step annealing treatment stabilizes carrier concentration and smooths surface of the IAZO active layer. Furthermore, the inverters and 9‐stage ring oscillators based on the IAZO transistors are demonstrated. This work promotes the application of the oxide transistors in back‐end‐off‐line and monolithic 3D integration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500286","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

A two‐step thermal annealing treatment strategy is proposed to enhance the electrical performance of the InAlZnO (IAZO) transistors, where the devices are initially pre‐annealing at 400 °C for 30 min, followed by a second annealing step across a wide temperature range of 200–500 °C. The optimized IAZO transistors exhibit excellent electrical properties, including a field‐effect mobility of 59.31 cm2 V−1 s−1, a subthreshold swing of 68.56 mV per decade, a turn‐on voltage of −0.74 V, an off‐state current below 100 pA, and an on‐to‐off current ratio over 107. The devices show excellent bias stress stability and thermal stability as well. By Hall measurement, X‐ray photoelectron spectroscopy, and atomic force microscopy characterization analysis, it is found that two‐step annealing treatment stabilizes carrier concentration and smooths surface of the IAZO active layer. Furthermore, the inverters and 9‐stage ring oscillators based on the IAZO transistors are demonstrated. This work promotes the application of the oxide transistors in back‐end‐off‐line and monolithic 3D integration.

查看原文本刊更多论文

面向三维集成的InAlZnO晶体管的两步退火处理方法

提出了一种两步热退火处理策略，以提高InAlZnO （IAZO）晶体管的电性能，其中器件首先在400°C下预退火30分钟，然后在200-500°C的宽温度范围内进行第二步退火。优化后的IAZO晶体管具有优异的电学性能，包括59.31 cm2 V−1 s−1的场效应迁移率，每10年的亚阈值摆幅为68.56 mV，导通电压为- 0.74 V，关断电流低于100 pA，通断电流比大于107。该器件具有优异的偏置应力稳定性和热稳定性。通过霍尔测量、X射线光电子能谱和原子力显微镜表征分析发现，两步退火处理稳定了载流子浓度，使IAZO活性层表面光滑。此外，还演示了基于IAZO晶体管的逆变器和9级环形振荡器。这项工作促进了氧化物晶体管在后端离线和单片三维集成中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.