Enabling Selective and Tunable Weight Updates in All-InGaZnO 3-Transistor 1-Capacitor Synaptic Circuits for On-Chip Training

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Minseung Kang;Mingi Kim;Jaehyeon Kang;Jongun Won;Hyeong Jun Seo;Changhoon Joe;Youngchae Roh;Yeaji Park;Sangbum Kim
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引用次数: 0

Abstract

Capacitor-based analog synaptic circuit arrays proposed so far typically required more than three transistors per synapse to enable selective updates for parallel backpropagation updates. For the first time, an innovative update scheme that enables selective updating without requiring additional transistors is demonstrated. This approach is experimentally validated through an all-InGaZnO (IGZO) thin-film transistor (TFT) 3-transistor 1-capacitor (3T1C) synaptic circuit. IGZO TFTs are specifically chosen for their ability to extend retention times due to extremely low leakage currents and their simplified fabrication processes at low temperatures. Fundamental synaptic operations, including controllable weight updates, long data retention, and stable programming endurance, are confirmed experimentally. Additionally, optimizing operational voltage conditions improves weight update behavior, which enhances network training performance. System-level analysis using a neural network hardware simulator with a derived weight update model demonstrates high training accuracy on the MNIST handwritten digit dataset and achieves maximum accuracy over 98%. With the proposed selection method and tunable weight updates, 3T1C synaptic circuit is a promising candidate for scalable large-scale deep neural network accelerators based on analog compute-in-memory technology.
在All-InGaZnO 3-晶体管1-电容突触电路中实现选择性和可调谐的权重更新,用于片上训练
目前提出的基于电容的模拟突触电路阵列通常需要每个突触三个以上的晶体管来实现并行反向传播更新的选择性更新。首次展示了一种创新的更新方案,该方案可以在不需要额外晶体管的情况下进行选择性更新。该方法通过全ingazno (IGZO)薄膜晶体管(TFT) 3晶体管1电容器(3T1C)突触电路进行了实验验证。由于极低的泄漏电流和在低温下简化的制造工艺,IGZO tft具有延长保持时间的能力,因此特别选择了IGZO tft。基本的突触操作,包括可控制的权重更新,长时间的数据保留,和稳定的编程耐力,被实验证实。此外,优化操作电压条件可以改善权重更新行为,从而提高网络训练性能。系统级分析使用神经网络硬件模拟器和派生的权重更新模型,在MNIST手写数字数据集上显示出很高的训练精度,最高准确率超过98%。基于所提出的选择方法和可调的权重更新,3T1C突触电路是基于模拟内存计算技术的可扩展大规模深度神经网络加速器的理想选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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