High-bandwidth CMOS-level integrated thin-film lithium niobate electro-optic modulator at 1064 nm wavelength

Abstract

Integrated electro-optic modulators (EOMs), as fundamental optical components, are widely utilized in various photonic systems. High-performance EOMs based on thin-film lithium niobate (TFLN) have been extensively studied and optimized for the conventional telecommunication band around 1550 nm, exhibiting excellent performance metrics such as low optical loss, low half-wave voltage–length product ($V_{\pi }L$), and high bandwidth. Nevertheless, emerging applications in high-power fiber lasers, optical frequency combs, and quantum communications urgently require specialized EOMs operating at the 1064 nm wavelength. Here, we report a TFLN EOM operating at 1064 nm. The device, with a compact 5 mm design, demonstrates a low $V_{\pi }$ of 2.8 V and high electro-optic bandwidth of 38 GHz. Compared to commercially available 1064 nm bulk lithium niobate (LN) modulators, our EOM demonstrates a two-fold improvement in modulation efficiency, substantially enhanced bandwidth, and significantly reduced device length. This breakthrough provides a promising solution for future systems requiring 1064 nm modulation that demand miniaturization, high bandwidth, and low driving voltage simultaneously.