Silicon avalanche photodiode for 13.5 nm radiation detection

Abstract

The characteristics of a silicon avalanche photodiode with a 340 μm active region diameter were studied by femtosecond laser pulses with wavelengths of 500, 600, 800 and 1000 nm and a nanosecond EUV source with a wavelength of 13.5 nm. It is shown that the dynamics of the avalanche photodiode photoresponse integral for a wavelength of 13.5 nm is similar to the dynamics for the 500 nm. Avalanche photodiode has a rise time within 135 ps and a fall time within 280 ps in the case of 500 nm wavelength, at a reverse bias voltage range between 240 V and 260 V. The presented avalanche photodiode matches subnanosecond time resolution limitations for studying radiation sources with a wavelength of 13.5 nm.