Observation of 1/f4 Noise in Organic Bilayer Ambipolar FETs and Proposition of Defect Engineering Method for Ultimate Noise Control

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-06-13 DOI:10.1002/aelm.202400858

Youngmin Han, Jaechan Song, Ryun‐Han Koo, Hocheon Yoo, Wonjun Shin

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引用次数: 0

Abstract

The omnipresence of low‐frequency noise (LFN) within semiconductor materials and devices poses a substantial concern for the reliability of integrated circuits (ICs). Consequently, considerable research endeavors are directed toward characterizing LFN across various types of field‐effect transistors (FETs), pivotal components in IC. Here, the LFN characteristics of bilayer ambipolar FETs based on organic semiconductors are investigated, / uri / We report that interface defects at the n/p junctions engender a correlation between trapping/detrapping noise and generation/recombination noise, resulting in a 1/f 4 noise. The elucidation of this distinctive noise behavior is conducted through comprehensive and comparative studies on LFN of single n‐ and p‐channel FETs. Furthermore, a novel approach is proposed to control excess noise in bilayer ambipolar FETs by inserting a thin insulator layer (parylene) between the n/p junction. This yields a notable reduction in noise amplitude, concurrently leading to the dissolution of 1/f 4 noise into 1/f 3 and 1/f 2 components. This study not only furnishes the inaugural report of the underlying mechanism behind the unique 1/f 4 noise but also presents a pragmatic strategy for its control, thereby opening a new horizon for LFN studies on organic‐based FETs.

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有机双层双极性场效应管中1/f4噪声的观察及缺陷工程方法的提出

半导体材料和器件中无处不在的低频噪声（LFN）对集成电路（ic）的可靠性提出了实质性的关注。因此，大量的研究工作都是针对不同类型场效应晶体管（fet）的LFN特性进行的，fet是IC中的关键部件。本文研究了基于有机半导体的双层双极性场效应晶体管的LFN特性。我们报告说，n/p结处的界面缺陷会产生捕获/去捕获噪声和产生/重组噪声之间的相关性，从而导致1/ f4噪声。通过对单n沟道和p沟道场效应管的LFN进行全面和比较研究，阐明了这种独特的噪声行为。此外，提出了一种在n/p结之间插入薄绝缘层（聚对二甲苯）的新方法来控制双层双极场效应管中的过量噪声。这产生了噪声幅度的显著降低，同时导致1/ f4噪声分解为1/ f3和1/ f2分量。本研究不仅首次报道了独特的1/ f4噪声背后的潜在机制，而且提出了一种实用的控制策略，从而为有机基场效应管的LFN研究开辟了新的视野。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.