Proximity effects in the graphene–Co3Sn2S2 interface

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jiaxin Zhang, Beate Paulus, Yuriy Dedkov and Elena Voloshina
{"title":"Proximity effects in the graphene–Co3Sn2S2 interface","authors":"Jiaxin Zhang, Beate Paulus, Yuriy Dedkov and Elena Voloshina","doi":"10.1039/D4TC04933K","DOIUrl":null,"url":null,"abstract":"<p >In graphene, the linear dependence of the density of states on energy and the low density of these valence band states around the Fermi energy make this material an ideal candidate for the observation of the proximity effects, when it is placed in contact with other functional materials. In this work, we explore the possible effects of the magnetic proximity and charge transfer on the interfacial properties of a graphene layer adsorbed on the (001) surface of Co<small><sub>3</sub></small>Sn<small><sub>2</sub></small>S<small><sub>2</sub></small>, the bulk phase of which is known as a topological quasi-2D semimetal in the half-metallic ferromagnetic state. Both counterparts mutually influence the properties of the heterostructure. Thus, formation of the interface allows tuning the electronic and magnetic properties of graphene over a wide range depending on the composition of the Co<small><sub>3</sub></small>Sn<small><sub>2</sub></small>S<small><sub>2</sub></small> interface layer. A synergy between graphene and Co<small><sub>3</sub></small>Sn<small><sub>2</sub></small>S<small><sub>2</sub></small>(001) enhances the perpendicular magnetic anisotropy energy of the systems, which is highly promising for the development of new magnetic recording media. As a reference for future experimental studies, the C 1s core-level shifts and C K near-edge X-ray absorption fine structure spectra are calculated for all considered cases.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 23","pages":" 11789-11799"},"PeriodicalIF":5.1000,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc04933k","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In graphene, the linear dependence of the density of states on energy and the low density of these valence band states around the Fermi energy make this material an ideal candidate for the observation of the proximity effects, when it is placed in contact with other functional materials. In this work, we explore the possible effects of the magnetic proximity and charge transfer on the interfacial properties of a graphene layer adsorbed on the (001) surface of Co3Sn2S2, the bulk phase of which is known as a topological quasi-2D semimetal in the half-metallic ferromagnetic state. Both counterparts mutually influence the properties of the heterostructure. Thus, formation of the interface allows tuning the electronic and magnetic properties of graphene over a wide range depending on the composition of the Co3Sn2S2 interface layer. A synergy between graphene and Co3Sn2S2(001) enhances the perpendicular magnetic anisotropy energy of the systems, which is highly promising for the development of new magnetic recording media. As a reference for future experimental studies, the C 1s core-level shifts and C K near-edge X-ray absorption fine structure spectra are calculated for all considered cases.

Abstract Image

石墨烯- co3sn2s2界面中的邻近效应
在石墨烯中,当它与其他功能材料接触时,态密度与能量的线性依赖以及这些价带态在费米能量周围的低密度使得这种材料成为观察邻近效应的理想候选者。在这项工作中,我们探讨了磁邻近和电荷转移对吸附在Co3Sn2S2(001)表面的石墨烯层的界面性质的可能影响,Co3Sn2S2的体相被称为半金属铁磁状态的拓扑准二维半金属。这两个对应物相互影响异质结构的性质。因此,界面的形成允许根据Co3Sn2S2界面层的组成在很大范围内调整石墨烯的电子和磁性能。石墨烯与Co3Sn2S2(001)之间的协同作用增强了体系的垂直磁各向异性能,为新型磁记录介质的开发提供了良好的前景。为进一步的实验研究提供参考,计算了所有考虑情况下的c1s核能级位移和ck近边缘x射线吸收精细结构谱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信