Impact of Gamma Ray Irradiation on the Blocking Characteristics of Edge Termination on 4H-SiC and a Novel Anti-Ionizing Radiation Technology

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-28 DOI:10.1109/JEDS.2025.3574497

Chuan-Han Chen;Bing-Yue Tsui;Der-Sheng Chao

引用次数: 0

Abstract

The impact of gamma ray irradiation on the blocking characteristics of edge termination on 4H-SiC has been investigated. The dominant mechanism for the degradation of breakdown voltage (VBD) is the trapping of net positive charges in the field oxide (FOX), while the increase in interface state density can be ignored. Through measurements of FOX MOSFETs and edge termination test structures, we found that edge termination with LOCal Oxidation of SiC (LOCOSiC) FOX exhibits lower variation in

$\mathrm {V_{BD}}$

compared to conventional CVD FOX. Furthermore, it shows almost no susceptibility to gamma-ray irradiation up to 250 kGy. Therefore, it is recommended to utilize LOCOSiC FOX to mitigate the impact of irradiation on the blocking characteristics of SiC power devices’ edge termination.

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伽玛射线辐照对4H-SiC封边特性的影响及一种新型抗电离辐射技术

研究了伽玛射线辐照对4H-SiC边缘终止阻滞特性的影响。击穿电压（VBD）下降的主要机制是电场氧化物（FOX）中净正电荷的捕获，而界面态密度的增加可以忽略不计。通过对FOX mosfet和边缘终止测试结构的测量，我们发现与传统CVD FOX相比，SiC局部氧化FOX （LOCOSiC）的边缘终止在$\mathrm {V_{BD}}$上的变化更小。此外，它对高达250 kGy的伽马射线辐照几乎没有敏感性。因此，建议利用LOCOSiC FOX来减轻辐照对SiC功率器件边缘终端阻断特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.