Microstructural Evolution of Gate Oxide in SiC Power MOSFETs Under Heavy-Ion Irradiation

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-02-20 DOI:10.1109/TDMR.2025.3544208

Yiping Xiao;Chaoming Liu;Jiaming Zhou;Mingzheng Wang;Chunhua Qi;Tianqi Wang;Mingxue Huo

引用次数: 0

Abstract

Maintaining the robustness of the gate oxide is a prerequisite for the on-orbit application of SiC MOSFETs. Recent research has demonstrated that the oxide undergoes premature breakdown within the operating voltage range after heavy ion irradiation, which is attributed to the activation of ion-induced gate latent damages (LDs) under gate post-irradiation gate stress (PIGS). However, the specific activation processes of LDs and oxide failure mechanism are not well understood. This study indicates that the dielectric breakdown induced epitaxy (DBIE) and thermal runaway effects are the dominant mechanisms when oxide rupture occurs, characterized by a step-like increase in gate leakage current during PIGS test. The failure analysis further confirmed the formation of DBIE hillock and percolation path. The results suggest that more attention should be paid to the gate oxide reliability before SiC MOSFETs could replace their Si-based counterparts in aerospace applications.

查看原文本刊更多论文

重离子辐照下SiC功率mosfet栅极氧化物的微观结构演变

保持栅极氧化物的稳健性是SiC mosfet在轨应用的先决条件。最近的研究表明，在重离子辐照后的工作电压范围内，氧化物发生了过早击穿，这是由于离子诱导的栅极潜在损伤（LDs）在栅极辐照后栅极应力（pig）下被激活。然而，目前对ld的具体活化过程和氧化失效机制尚不清楚。本研究表明，介质击穿诱导外延（DBIE）和热失控效应是氧化物破裂的主要机制，其特征是在pig测试期间栅极泄漏电流呈阶梯状增加。破坏分析进一步证实了DBIE丘的形成和渗流路径。结果表明，在SiC mosfet取代硅基mosfet在航空航天领域的应用之前，应该更多地关注栅极氧化物的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.