{"title":"Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects","authors":"Anand Pandey;Ankush Bag","doi":"10.1109/TDMR.2025.3559531","DOIUrl":null,"url":null,"abstract":"The operational thermal stability of perovskite solar cells (PSCs) is a critical issue hindering their commercialization. Therefore, besides achieving high power conversion efficiency (PCE), understanding and quantifying the device degradation kinetics of PSCs is necessary for their reliability and to prevent failure under thermal stress. In this work, exponential and linear degradation models have been adopted to comprehend and quantify the degradation kinetics of FAPbI3 and multifunctional fluorinated molecule 3-fluoro-4-methoxy-4’,4”-bis((4-vinyl benzyl ether) methyl)) triphenylamine (FTPA)-modified FAPbI3 PSCs. Further, various figures of merit, such as acceleration factor, degradation factor, mean lifetime, transformational fraction, and activation energy, have been deduced by fitting the PCE degradation data into the Arrhenius equation and onto the Johnson– Mehl-Avrami (JMA) kinetic models. These figures of merit have been correlated with other defect-determining factors such as micro-strain and Urbach’s energy. The degradation factor and PbI2 residuals are reduced for controlled PSCs to FTPA-modified PSCs. Furthermore, the activation energy and operational thermal stability of FTPA-modified PSCs have increased due to the forming of a hydrogen-bonding polymer network, which enhances PSCs’ thermal stability and acceleration factor. Our findings reveal that the studied devices’ intrinsic stability, thermal stability, and mean lifetime strongly correlate with micro-structural and optoelectronic defects, which helps to improve the performance of photovoltaics.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"288-295"},"PeriodicalIF":2.3000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10962206/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The operational thermal stability of perovskite solar cells (PSCs) is a critical issue hindering their commercialization. Therefore, besides achieving high power conversion efficiency (PCE), understanding and quantifying the device degradation kinetics of PSCs is necessary for their reliability and to prevent failure under thermal stress. In this work, exponential and linear degradation models have been adopted to comprehend and quantify the degradation kinetics of FAPbI3 and multifunctional fluorinated molecule 3-fluoro-4-methoxy-4’,4”-bis((4-vinyl benzyl ether) methyl)) triphenylamine (FTPA)-modified FAPbI3 PSCs. Further, various figures of merit, such as acceleration factor, degradation factor, mean lifetime, transformational fraction, and activation energy, have been deduced by fitting the PCE degradation data into the Arrhenius equation and onto the Johnson– Mehl-Avrami (JMA) kinetic models. These figures of merit have been correlated with other defect-determining factors such as micro-strain and Urbach’s energy. The degradation factor and PbI2 residuals are reduced for controlled PSCs to FTPA-modified PSCs. Furthermore, the activation energy and operational thermal stability of FTPA-modified PSCs have increased due to the forming of a hydrogen-bonding polymer network, which enhances PSCs’ thermal stability and acceleration factor. Our findings reveal that the studied devices’ intrinsic stability, thermal stability, and mean lifetime strongly correlate with micro-structural and optoelectronic defects, which helps to improve the performance of photovoltaics.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.