Monolithically Integrated Hydrogen-Terminated Diamond FET Logic Circuits

Abstract

Logic circuits are the first step toward integrated circuits. Here, we fabricated the monolithically E/R logic, direct coupled E/E logic, and E/D inverter logic circuit with respective loads of resistor, enhancement field-effect transistor (FET), and depletion FET using hydrogenated diamond and observed the performance of these logic circuits. The gain and voltage swing of E/R logic circuits are strongly influenced by the value of the load resistance, which are commonly employed in separate components. E/E logic circuit exhibits small voltage swing, low gain, and low noise margin. E/D logic circuits present significant advantages in terms of voltage swing, gain, noise margins, and power consumption over E/R and E/E logic circuits. The E/D mode circuit shows a logic voltage swing of −9.44 V, a voltage gain of 15.5 V/V, low-/high-noise margins of 0.82/7.07 V, and static power consumption of $10^{-{3}}$ W and proper functions up to at least $200~^{\circ }$ C at a supply voltage of −10 V. These results show great potential for diamond smart power integrated circuit application.