Field-Emission Light Sources Based on Porous Silicon Planar Electron Emitter

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-28 DOI:10.1109/TED.2025.3562507

He Li;Li Sailei;He Qi;Sun Wenqi;Luo Wei;Shen Guiying

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引用次数: 0

Abstract

This article proposes a novel field-emission light source (FELS) with a simplified structure that can be operated under low-pressure conditions. The flat-format FELS, driven by a porous silicon (PS)-based planar electron emitter, exhibits bright luminescence at a low field emission current density of approximately

$5~\mu $

A/cm2 even at the ambient pressure as high as

$10^{{2}}$

Pa. This suggests the favorable energy conversion efficiency for this FELS device. Moreover, this novel FELS achieves reduced thermal effects and power consumption due to its lower driving voltage and conduction current compared with the conventional device. The repeatability within 8% and the stability below 3% of the PS planar emitter further supports its potential for FELS applications. As a promising on-chip electron source, the PS-based cold cathode opens avenues for future high-performance, low cost, silicon-compatible FELS with large area and operation at ambient pressure.

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基于多孔硅平面电子发射器的场发射光源

本文提出了一种结构简单、可在低压条件下工作的新型场发射光源（FELS）。在高至$10^{{2}}$ Pa的环境压力下，由多孔硅（PS）基平面电子发射器驱动的平板格式FELS在约$5~\mu $ a /cm2的低场发射电流密度下也表现出明亮的发光。这表明该FELS装置具有良好的能量转换效率。此外，与传统器件相比，该新型FELS具有更低的驱动电压和传导电流，从而降低了热效应和功耗。PS平面发射极的可重复性在8%以内，稳定性低于3%，进一步支持了其在FELS应用中的潜力。作为一种很有前途的片上电子源，基于ps的冷阴极为未来高性能、低成本、大面积、环境压力下运行的硅兼容FELS开辟了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.