High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI:10.1109/TED.2025.3559492

Yifan Fan;Xiangyang Chen;Zhecheng Dai;Jingyi Wang;Daqi Shen;Wenyang Wang;Haiming Ji;Pengfei Tian;Baile Chen

引用次数: 0

Abstract

We report on the demonstration of an InGaP/AlGaAs heterojunction avalanche photodiode (APD) with an aluminum composition of 0.8, optimized for high-speed visible-light detection. The APD achieves a 3-dB bandwidth of 2.25 GHz at a multiplication gain of 72, corresponding to a gain-bandwidth product (GBP) of 162 GHz. It exhibits low dark current, low excess noise, and high multiplication gain, highlighting its suitability for high-performance optical applications. To showcase its potential, we integrated the APD into a visible-light communication system with a GaN micro-LED transmitter, achieving a data rate exceeding 1063 Mb/s. These findings highlight the promise of InGaP/AlGaAs APDs for advancing high-speed visible-light communication technologies.

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用于led可见光通信的高速InGaP/AlGaAs雪崩光电二极管

我们报道了一种铝成分为0.8的InGaP/AlGaAs异质结雪崩光电二极管（APD）的演示，该二极管优化用于高速可见光检测。APD以72倍增益实现2.25 GHz的3db带宽，对应于162 GHz的增益带宽积（GBP）。它具有低暗电流，低多余噪声和高倍增增益，突出其适用于高性能光学应用。为了展示其潜力，我们将APD集成到具有GaN微型led发射器的可见光通信系统中，实现了超过1063 Mb/s的数据速率。这些发现突出了InGaP/AlGaAs apd在推进高速可见光通信技术方面的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.