Optimizing peptide detection using FET-based sensors: Integrating non-linearities of surface functionalization

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-05-28 DOI:10.1016/j.sse.2025.109161

Naveen Kumar , Ankit Dixit , Prateek Kumar , Md. Hasan Raza Ansari , Navjeet Bagga , Navneet Gandhi , P.N. Kondekar , César Pascual García , Vihar Georgiev

引用次数: 0

Abstract

This study presents a method for enhancing peptide interaction with ATPES/linkers, utilizing tert-Butyloxycarbonyl to protect the N-terminal and prevent undesirable reactions. Addressing noise interference in peptide recognition, we devised a noise-filtering technique that enables accurate peptide signature retrieval even at low signal-to-noise ratio (SNR) by leveraging the full pH titration spectrum. Additionally, our research explores the impact of BOC protection levels on the functionalization of amine surfaces with APTES, highlighting how silanol sites influence the isoelectric point, surface potential, and capacitance. These findings underscore the necessity of considering chemical protection and surface chemistry in peptide synthesis and sequencing, offering valuable insights for bioanalytical applications.

查看原文本刊更多论文

利用基于fet的传感器优化肽检测：整合表面功能化的非线性

本研究提出了一种增强肽与ATPES/连接物相互作用的方法，利用叔丁基氧羰基保护n端，防止不良反应。为了解决肽识别中的噪声干扰，我们设计了一种噪声滤波技术，即使在低信噪比（SNR）的情况下，通过利用完整的pH滴定谱，也能实现准确的肽特征检索。此外，我们的研究探讨了BOC保护水平对APTES对胺表面功能化的影响，强调了硅烷醇位点如何影响等电点、表面电位和电容。这些发现强调了在肽合成和测序中考虑化学保护和表面化学的必要性，为生物分析应用提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.