Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-05-28 DOI:10.1016/j.sse.2025.109159

Prateek Kumar , Naveen Kumar , Ankit Dixit , Md Hasan Raza Ansari , Navjeet Bagga , Navneet Gandhi , P.N. Kondekar , César Pascual García , Vihar Georgiev

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引用次数: 0

Abstract

This work discusses the sensitivity response of a feedback field effect transistor-based ion sensor (ISFBFET). To precisely predict the sensing behavior, the Gouy-Chapman-Stern and site-binding methods are used as the principle models in a detailed TCAD study. For charge binding, the deposition of Si₃N₄ over SiO₂ is used as a sensing element. The behavior of the ISFBFET is discussed against gate work function (Φ_G) engineering and bulk pH. The performance of the sensor is analyzed using I_DS-V_DS, I_DS-transit time, and snap-back characteristics. Sensitivity is evaluated in terms of constant current and constant voltage using snap-back characteristics and at Φ_G = 4.4 eV, the highest sensitivity of 2.35 and 405 is obtained. The proposed work can help in designing FBFET based ion-sensors for sensing biomolecules or amino acids.

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利用回跳特性评估氮化硅基反馈场效应晶体管的离子灵敏度

本文讨论了反馈场效应晶体管离子传感器（isfbet）的灵敏度响应。为了准确预测TCAD的传感行为，采用了gay - chapman - stern和位点结合方法作为主要模型进行了详细的TCAD研究。对于电荷结合，Si3N4在SiO2上的沉积被用作传感元件。根据门功函数（ΦG）工程和整体ph值讨论了ISFBFET的行为。利用IDS-VDS， ids -传输时间和快照回调特性分析了传感器的性能。利用回跳特性对恒流和恒电压进行灵敏度评估，在ΦG = 4.4 eV时，灵敏度最高为2.35和405。这项工作有助于设计基于fbet的离子传感器，用于传感生物分子或氨基酸。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.