{"title":"One-Ferroelectric-Tunnel-FET-Based Reconfigurable Logic Gates","authors":"Jaemin Yeom;Minjeong Ryu;Jae Seung Woo;Jin Wook Lee;Seonggeun Kim;Seungwon Go;Sangwan Kim;Woo Young Choi","doi":"10.1109/TED.2025.3561710","DOIUrl":null,"url":null,"abstract":"A novel reconfigurable logic gate (RLG) utilizing one ferroelectric tunnel field-effect transistor (FeTFET) is proposed for the first time. By leveraging the symmetric ambipolar current of the TFET and the minor loop behavior of the ferroelectric, <sc>nand/or/xnor/imp/rimp</small> operations are performed within a single FeTFET, enabling logic-in-memory (LiM) with high area efficiency. It is demonstrated that two inputs can be programmed in two steps, and the type of logic operation can be changed by simply altering the read voltage. The proposed FeTFET-based RLGs consume >99% lower operation energy than FeFET-based ones.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3302-3306"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10978880/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A novel reconfigurable logic gate (RLG) utilizing one ferroelectric tunnel field-effect transistor (FeTFET) is proposed for the first time. By leveraging the symmetric ambipolar current of the TFET and the minor loop behavior of the ferroelectric, nand/or/xnor/imp/rimp operations are performed within a single FeTFET, enabling logic-in-memory (LiM) with high area efficiency. It is demonstrated that two inputs can be programmed in two steps, and the type of logic operation can be changed by simply altering the read voltage. The proposed FeTFET-based RLGs consume >99% lower operation energy than FeFET-based ones.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.