Evolution of structural and morphological properties in GaN films on Si and glass substrates

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-26 DOI:10.1016/j.mssp.2025.109693

Barbara S. Damasceno , Isabela M. Horta , Kevin M. Wyss , James M. Tour , Argemiro S. da Silva Sobrinho , Andre L. de J. Pereira , Douglas M.G. Leite

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引用次数: 0

Abstract

This study investigates the influence of thickness on the structure and morphology of sputtered wurtzite GaN thin films and evaluates their potential as piezoelectric materials for surface acoustic wave (SAW) devices. High-quality GaN films were deposited on Si(100) and glass substrates via reactive magnetron sputtering under optimized conditions. X-ray diffractometry (XRD), Raman spectroscopy, and transmission electron microscopy (TEM) analysis confirmed a preferential c-axis orientation. A detailed assessment of the crystalline quality and structural properties revealed that films grown for 6 h on Si substrates exhibited superior crystallinity and lower defect density. However, increasing film thickness led to higher surface roughness, which may impact SAW device performance. These findings highlight the viability of sputtered GaN films for SAW applications, provided that deposition parameters are carefully controlled to balance crystallinity and surface roughness. This work demonstrates the potential of cost-effective sputtering technique for producing GaN films suitable for high-frequency SAW devices.

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硅和玻璃衬底上氮化镓薄膜结构和形态特性的演变

本研究探讨了厚度对溅射纤锌矿GaN薄膜结构和形貌的影响，并评估了其作为表面声波（SAW）器件压电材料的潜力。在优化的条件下，通过反应磁控溅射在Si（100）和玻璃衬底上沉积了高质量的GaN薄膜。x射线衍射（XRD），拉曼光谱和透射电子显微镜（TEM）分析证实了优先的c轴取向。晶体质量和结构性能的详细评估表明，在Si衬底上生长6小时的薄膜具有优异的结晶度和较低的缺陷密度。然而，增加薄膜厚度会导致更高的表面粗糙度，这可能会影响SAW器件的性能。这些发现强调了溅射GaN薄膜在SAW应用中的可行性，前提是仔细控制沉积参数以平衡结晶度和表面粗糙度。这项工作证明了具有成本效益的溅射技术在生产适合高频SAW器件的GaN薄膜方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.