Design of TDI Imaging Sensor Pixel for Low Power Consumption and High-Speed Applications

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI:10.1109/LED.2025.3556414

Siyu Guo;Assaf Lahav;Quan Zhou;Pierre Boulenc;Alexander V. Klekachev;Xinjie Zhuang;Xinyang Wang

引用次数: 0

Abstract

In this letter, a novel high-speed, low-power consumption, large full well capacity (FWC), charge-domain Time-Delay Integration (TDI) image sensor based on a 90nm CCD-in-CMOS process is presented. A combination of the advantages of the buried channel in the CCD channel and the pinning voltage gradient in the fully depleted tapered Pinned-Photodiode (PPD) makes the proposed new structure well-suited for low-power and high-speed applications. To demonstrate the effectiveness of both optimizations, a Back-Side Illumination (BSI) test chip with a

$14~\mu $

$\times 14~\mu $

m pixel is designed, manufactured, and characterized. The pixel maximum FWC exceeds 120 ke−. Thanks to the built-in electric field in the tapered PPD, the test chip achieves 99.998% Charge Transfer Efficiency (CTE) under equivalent 2.5 MHz line frequency condition without Modulation Transfer Function (MTF) degradation.

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低功耗和高速应用的TDI成像传感器像素设计

本文介绍了一种基于90nm CCD-in-CMOS工艺的新型高速、低功耗、大满阱容量（FWC）、电荷域时延集成（TDI）图像传感器。结合CCD通道中的埋地通道和完全耗尽锥形pin -光电二极管（PPD）的pin电压梯度的优点，使所提出的新结构非常适合低功耗和高速应用。为了证明这两种优化的有效性，设计、制造并表征了具有14~\mu $ m $ × 14~\mu $ m像素的背面照明（BSI）测试芯片。像素最大FWC超过120 ke−。由于锥形PPD内置电场，在等效2.5 MHz线频条件下，测试芯片的电荷转移效率（CTE）达到99.998%，且没有调制传递函数（MTF）下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.