A High-Power RF SOI Switch With 48.7-dBm P-₀.₁dB Peak Power for 5G MIMO Applications

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI:10.1109/LED.2025.3556581

Wanfu Liu;Jianhui Wu

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引用次数: 0

Abstract

In this brief, a high-power RF switch that operates at

$2\sim 4$

GHz is designed and implemented using 130nm RF SOI technology. To improve the high-power handling capability in Tx mode, a series and parallel stacked structure with uniform voltage division across an OFF-shunt branch was proposed and analyzed. For the shunt branch of RF switch, the Vds voltage discrepancy of each transistor under high power is balanced by adjusting the width ratio between transistors, ensuring high-power handling capability. Moreover, the suggested design employs capacitor-based compensation to further equalize the voltage division. The experimental results demonstrate that the proposed RF switch achieves 48.7 dBm (74W) of 0.1 dB compression point (P-0.1dB, peak power),

$0.35\sim 0.87$

dB insertion loss, transmit-receive isolation (Tx-Rx ISO) >35.7 dB at

$105~^{\circ }$

C. The reported structural design ensures stability and reliability under high-power operating, providing significant potential for 5G MIMO applications.

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48.7 dbm P- 0大功率RF SOI开关。5G MIMO应用的1₁dB峰值功率

在本简报中，设计并实现了一种使用130nm RF SOI技术，工作频率为$ 2sim $ 4ghz的高功率RF开关。为了提高Tx模式下的大功率处理能力，提出并分析了一种off分流支路均匀分压的串并联堆叠结构。对于射频开关的分流支路，通过调节晶体管之间的宽度比来平衡高功率下各晶体管的Vds电压差，保证高功率处理能力。此外，建议的设计采用基于电容的补偿来进一步均衡电压分配。实验结果表明，所提出的射频开关在0.1dB压缩点（P-0.1dB，峰值功率）下达到48.7 dBm (74W)，插入损耗为0.35美元，插入损耗为0.87美元，收发隔离（x- rx ISO）为35.7 dB，工作在105~^{\circ}$ C.所报告的结构设计确保了高功率工作下的稳定性和可靠性，为5G MIMO应用提供了巨大的潜力。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.