Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-07 DOI:10.1109/LED.2025.3558166

Dawei Wang;Hunter D. Ellis;Dinusha Herath Mudiyanselage;Ziyi He;Bingcheng Da;Imteaz Rahaman;Izak Baranowski;Siddhant Gangwal;Dragica Vasileska;Kai Fu;Houqiang Fu

引用次数: 0

Abstract

In this work, a guard array termination structure using hydrogen plasma technology (H-GAT) was proposed for multi-kV AlGaN/GaN heterojunction Schottky barrier diodes. A highest breakdown voltage (BV) of 9.5 kV, a specific on-resistance (

${R}_{\textit {ON}}\text {)}$

$97~\Omega \cdot $

mm, and a capacitance at zero bias (

${C}_{{j}{0}}\text {)}$

of 4.2 pF/mm were achieved on p-GaN/AlGaN/GaN-on-SiC platform. The fabrication process using hydrogen plasma termination was simple and easy to implement compared with other technologies used in multi-kV devices. This work provides an effective alternative route for the future development of low-cost, high-voltage 10 kV-class GaN power electronics.

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具有氢等离子体保护阵列终端的多kv AlGaN/GaN异质结肖特基势垒二极管

本文提出了一种基于氢等离子体技术（H-GAT）的多kv AlGaN/GaN异质结肖特基势垒二极管保护阵列终端结构。在p-GaN/AlGaN/GaN-on-SiC平台上获得了最高击穿电压（BV）为9.5 kV，比导通电阻（${R}_{\textit {ON}}\text {）}$ 97~\Omega \cdot $ mm，零偏置电容（${C}_{{j}{0}}\text {）}$ 4.2 pF/mm。与其他多千伏器件工艺相比，采用氢等离子体端接的工艺简单，易于实现。这项工作为未来低成本、高压10kv级GaN电力电子器件的发展提供了一条有效的替代途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.