Claude Rohrbacher;Dominic Leclerc;Joffrey Rivard;Romain Ritzenthaler;Christian Lupien;Hans Mertens;Naoto Horiguchi;Eva Dupont-Ferrier
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引用次数: 0
Abstract
We report on the first cryogenic characterization of a nMOS nanosheet transistor down to 1.2 K. We demonstrate that the device operates at low temperatures both in the transistor regime with improved DC characteristics (subthreshold swing) and in the quantum regime with adjustable charge occupation of the quantum dot down to a single electron. We further perform extensive low-frequency charge noise measurements in the quantum dot regime over a broad range of charge occupation numbers and observe low average charge noise of $\left \lt {{ {S}_{{0}}}}\right \gt = {28} \pm {10}\; \mu \textit {eV}/\sqrt {\textit {Hz}}$ at 1 Hz. These results demonstrate that nanosheet transistors are promising for large scale quantum/classical co-integration of CMOS devices for quantum information processing applications.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.