Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Claude Rohrbacher;Dominic Leclerc;Joffrey Rivard;Romain Ritzenthaler;Christian Lupien;Hans Mertens;Naoto Horiguchi;Eva Dupont-Ferrier
{"title":"Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing","authors":"Claude Rohrbacher;Dominic Leclerc;Joffrey Rivard;Romain Ritzenthaler;Christian Lupien;Hans Mertens;Naoto Horiguchi;Eva Dupont-Ferrier","doi":"10.1109/LED.2025.3556348","DOIUrl":null,"url":null,"abstract":"We report on the first cryogenic characterization of a nMOS nanosheet transistor down to 1.2 K. We demonstrate that the device operates at low temperatures both in the transistor regime with improved DC characteristics (subthreshold swing) and in the quantum regime with adjustable charge occupation of the quantum dot down to a single electron. We further perform extensive low-frequency charge noise measurements in the quantum dot regime over a broad range of charge occupation numbers and observe low average charge noise of <inline-formula> <tex-math>$\\left \\lt {{ {S}_{{0}}}}\\right \\gt = {28} \\pm {10}\\; \\mu \\textit {eV}/\\sqrt {\\textit {Hz}}$ </tex-math></inline-formula> at 1 Hz. These results demonstrate that nanosheet transistors are promising for large scale quantum/classical co-integration of CMOS devices for quantum information processing applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"991-994"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10947247/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

We report on the first cryogenic characterization of a nMOS nanosheet transistor down to 1.2 K. We demonstrate that the device operates at low temperatures both in the transistor regime with improved DC characteristics (subthreshold swing) and in the quantum regime with adjustable charge occupation of the quantum dot down to a single electron. We further perform extensive low-frequency charge noise measurements in the quantum dot regime over a broad range of charge occupation numbers and observe low average charge noise of $\left \lt {{ {S}_{{0}}}}\right \gt = {28} \pm {10}\; \mu \textit {eV}/\sqrt {\textit {Hz}}$ at 1 Hz. These results demonstrate that nanosheet transistors are promising for large scale quantum/classical co-integration of CMOS devices for quantum information processing applications.
在300毫米量子计算制造平台上生产纳米片晶体管
我们报告了nMOS纳米片晶体管在1.2 K低温下的首次低温表征。我们证明了该器件在具有改进的直流特性(亚阈值摆动)的晶体管状态和具有可调电荷占用量子点至单个电子的量子状态下在低温下工作。我们进一步在广泛的电荷占用数范围内对量子点进行了广泛的低频电荷噪声测量,并观察到1hz时的低平均电荷噪声$\left \lt {{ {S}_{{0}}}}\right \gt = {28} \pm {10}\; \mu \textit {eV}/\sqrt {\textit {Hz}}$。这些结果表明,纳米片晶体管有望用于量子信息处理中CMOS器件的大规模量子/经典协整。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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