A self-powered photodetector of SnSeS/p-Si heterojunction with high-performance†

Abstract

Two-dimensional transition metal dichalcogenides have attracted great interest in recent years due to their excellent photoelectric properties. The lateral photovoltaic (LPV) properties of SnSeS/p-Si heterojunctions are investigated in this paper. The quality of the SnSeS film prepared using pulsed laser deposition is demonstrated through the use of X-ray diffraction, Raman, and X-ray photoelectron spectra. Both large position sensitivity (236 mV mm⁻¹) and an ultrafast relaxation time of 0.48 μs of LPV under 532 nm laser irradiation are observed in a SnSeS/p-Si heterojunction at room temperature. The position sensitivity of the LPV in the SnSeS/p-Si heterojunction shows a weak dependence on the laser wavelength from 405 to 808 nm. The SnSeS/p-Si heterojunction is utilized to establish an optical communication system with a photoelectrical bandwidth of up to 20 kHz. Our findings highlight the significant potential of the SnSeS/p-Si heterojunction photodetector as a promising candidate for next-generation optoelectronic materials in optical communication and self-powered position-sensitive detectors.