Ordered Co/Ni oxide nanostructures from MOFs: enhancing efficiency in hybrid asymmetric energy devices†

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xiaolong Leng, S. V. Prabhakar Vattikuti, Yumei Li, P. Rosaiah, Abdullah N. Alodhayb, Saravanan Pandiaraj, Burragoni Sravanthi Goud, Ganesh Koyyada, Jae Hong Kim, Nam Nguyen Dang and Jaesool Shim
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引用次数: 0

Abstract

MOF-derived metal oxides are promising electrode materials for energy storage due to their tunable porosity, large surface area, and versatile structures, which enhance electrochemical performance. However, their practical use is currently limited by poor conductivity and structural instability, requiring advanced modifications to circumvent this issue. This research investigates the synthesis of Co3O4/NiO nanostructures (MD-Co/Ni) derived from bimetallic metal–organic frameworks (Co/Ni-MOFs) with varying Co : Ni ratios (0.25 : 1, 0.5 : 1, 0.75 : 1, and 1 : 1) through thermal decomposition. The primary objective is to enhance energy storage efficiency. The study also examines how different Co : Ni ratios influence the electrochemical performance of the resulting nanostructures. The Co/Ni-MOF precursor was synthesized via a straightforward solvothermal method using trimesic acid (TA) as the ligand and polyvinylpyrrolidone (PVP) as a stabilizer. XRD analysis confirmed the high crystallinity of MD-Co/Ni nanostructures, while FE-SEM revealed its nanorod-/nanosheet-like morphology featuring rod-shaped nanoparticles. Electrochemical evaluations demonstrated that MD-Co/Ni achieved a superior specific capacitance (Csp) of 2836 F g−1 at 1 A g−1, surpassing its pure bimetallic MOF counterparts. This improvement is credited to the synergistic effects of its bimetallic oxide composition, increased surface area from the meso-porous structure, and enhanced electron/ion transport pathways. Furthermore, a hybrid asymmetric supercapacitor (HS) was fabricated using MD-Co/Ni as the positive electrode. The device exhibited an exceptional energy density (Ed) of 27.28 W h kg−1 at a power density (Pd) of 380 W kg−1 and an outstanding working stability, retaining 80% capacitance and achieving a coulombic efficiency of 99.53% after 9500 cycles. These findings highlight the significant potential of thermally derived MOF-based nanostructures for futuristic energy storage systems.

mof的有序Co/Ni氧化物纳米结构:提高混合不对称能量器件的效率
mof衍生的金属氧化物具有孔隙度可调、比表面积大、结构多样等优点,可提高电化学性能,是一种很有前途的储能电极材料。然而,目前它们的实际应用受到导电性差和结构不稳定的限制,需要进行先进的改造来解决这个问题。本研究以不同Co: Ni比例(0.25:1,0.5:1,0.75:1和1:1)的双金属金属有机骨架(Co/Ni- mofs)为原料,通过热分解合成Co3O4/NiO纳米结构(MD-Co/Ni)。主要目标是提高能源储存效率。该研究还考察了不同的Co: Ni比例如何影响所得到的纳米结构的电化学性能。以三聚己酸(TA)为配体,聚乙烯吡咯烷酮(PVP)为稳定剂,采用溶剂热法合成了Co/Ni-MOF前驱体。XRD分析证实了MD-Co/Ni纳米结构的高结晶度,而FE-SEM则显示了其具有棒状纳米颗粒的纳米棒/纳米片状形貌。电化学评价表明,MD-Co/Ni在1 a g−1下具有2836 F g−1的优越比电容(Csp),超过了纯双金属MOF。这种改进归功于其双金属氧化物组成的协同效应,介孔结构增加的表面积,以及增强的电子/离子传输途径。在此基础上,以MD-Co/Ni为正极制备了杂化非对称超级电容器(HS)。该器件在功率密度(Pd)为380 W kg−1时,具有27.28 W h kg−1的能量密度(Ed)和出色的工作稳定性,在9500次循环后保持80%的电容和99.53%的库仑效率。这些发现突出了基于mof的热衍生纳米结构在未来储能系统中的巨大潜力。
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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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