Effects of Magnetic Field on Stability and Power of Vacuum Electronic Amplifiers

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-17 DOI:10.1109/TED.2025.3556097

Vadim Jabotinski;Alexander N. Vlasov;Simon J. Cooke;Thomas M. Antonsen

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引用次数: 0

Abstract

The theory and modeling of the effects of magnetic focusing field on the stability, gain, and power of the large class of VE amplifiers based on RF structures with a series of interaction gaps used in traveling-wave tubes, klystrons, and other VE devices is presented. The RF structure and e-beam lumped circuit parameter matrices are computed for different magnetic focusing conditions, and then the self-excitation thresholds are obtained from the determinant equations. A new formulation for the RF structure gain is derived and used for the found self-excitation thresholds. An analytical solution of the beam envelope equation not limited by the small-amplitude oscillations is obtained and employed to define the magnetic focusing conditions providing various beam envelope radii and oscillation amplitudes. It is shown for the example

${K} _{a}$

-band serpentine structure that the optimum magnetic focusing, e-beam radius, as well as axial position of the oscillating beam envelope allow significantly greater gain and power. The methods and analysis described here are essential for the computation, research, and design of advanced RF amplifiers.

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磁场对真空电子放大器稳定性和功率的影响

介绍了磁聚焦场对具有一系列相互作用间隙的RF结构的大型VE放大器的稳定性、增益和功率影响的理论和建模，这些放大器用于行波管、速调管和其他VE器件。计算了不同磁聚焦条件下的射频结构和电子束集总电路参数矩阵，并从行列式方程中得到了自激阈值。推导了射频结构增益的新公式，并将其用于所发现的自激阈值。得到了不受小振幅振荡限制的波束包络方程的解析解，并定义了在不同波束包络半径和振荡幅度下的磁聚焦条件。对于示例${K} _{a}$波段蛇形结构，最佳磁聚焦、电子束半径以及振荡波束包络线的轴向位置可以显著提高增益和功率。本文描述的方法和分析对于先进射频放大器的计算、研究和设计至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.