High Responsivity and Wide Bandwidth SiGe/Si Phototransistor for Optical Interconnection

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI:10.1109/TED.2025.3552363

Hongyun Xie;Yunpeng Ge;Zimai Xu;Ziming Liu;Yudong Ma;Xiaoyan Yi;Wanrong Zhang

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引用次数: 0

Abstract

Silicon-based hetero-junction phototransistor (HPT) is a potential optical detector promising for communication links in optic-interconnect network due to their advantages of low cost, high internal gain, high sensitivity, and compatibility with CMOS processes. In this work, a SiGe/Si HPT with double-zone base is designed and optimized to provide high responsivity and outstanding frequency characteristics simultaneously. The SiGe HPTs with different window positions and areas are fabricated using BiCMOS-compatible mesa process, and the influence of transverse parameters on HPT performance is analyzed comprehensively. With this design, a maximum optical responsivity of 8.52 A/W and a maximum optical 3 dB bandwidth of 638 MHz are demonstrated. The responsivity bandwidth product achieves

$4.69~\text {GHz}\cdot \text {A}/\text {W}$

with

$50\times 50~\mu $

m2 optical window on emitter mesa under 850 nm incident light, which is expected to be applied in silicon-based optical connecting technology to simplify the optical receiving circuits and lower its power consumption.

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用于光互连的高响应性和宽带宽SiGe/Si光电晶体管

硅基异质结光电晶体管（HPT）具有成本低、内部增益高、灵敏度高、与CMOS工艺兼容等优点，是一种很有潜力应用于光互连网络通信链路的光探测器。在这项工作中，设计和优化了具有双区基的SiGe/Si HPT，以同时提供高响应性和出色的频率特性。采用bicmos兼容台面工艺制备了不同窗口位置和面积的SiGe HPT，并综合分析了横向参数对HPT性能的影响。该设计的最大光响应率为8.52 a /W，最大光带宽为638 MHz。该产品在850 nm入射光下，以50 × 50~\mu $ m2的光窗，实现了$4.69~\text {GHz}\cdot \text {A}/\text {W}$的响应率带宽，有望应用于硅基光连接技术中，简化光接收电路，降低功耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.