Dynamical Model of Threshold Switching Process in OTS Selector

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-20 DOI:10.1109/TED.2025.3549392

Ziqi Chen;Niannian Yu;Hao Tong;Xiangshui Miao

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引用次数: 0

Abstract

Ovonic threshold switch (OTS) selector is crucial for developing high-density nonvolatile memory (NVM) with crossbar arrays. Its operational speed has been of great concern. This work presents a multiphysics dynamic model of threshold switching in OTS that accurately reproduces the time-resolved electrical property changes during pulse operations. The model focuses on the coupling between electrothermal and structural dynamics at device level rather than the carrier motion at the atomic level. Simulation results show parameter-dependent characteristics consistent with actual devices under varying OTS structure parameters and temperatures. In addition, we simulate the intrinsic stochastic characteristics of OTS using the TS dynamics model by introducing a physical random term, which captures the randomness in delay times for device turn on and turn off. Results indicate that both turn-on delay time and turn-off holding time follow Weibull distributions similar to real devices. This work aids in optimizing the speed performance of OTS devices for NVM and neuromorphic applications.

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OTS选择器中阈值切换过程的动力学模型

Ovonic阈值开关（OTS）选择器是开发高密度非易失性存储器（NVM）的关键。它的运行速度一直备受关注。本文提出了一种OTS阈值开关的多物理场动态模型，该模型可以准确地再现脉冲操作过程中时间分辨的电学性质变化。该模型侧重于器件级的电热动力学和结构动力学之间的耦合，而不是原子级的载流子运动。仿真结果表明，在不同OTS结构参数和温度下，参数依赖特性与实际器件一致。此外，我们利用TS动力学模型，通过引入物理随机项来模拟OTS的固有随机特性，该物理随机项捕获了设备打开和关闭延迟时间的随机性。结果表明，导通延迟时间和关断保持时间都符合与实际设备相似的威布尔分布。这项工作有助于优化用于NVM和神经形态应用的OTS器件的速度性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.