Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-24 DOI:10.1109/TED.2025.3547291

D. Yadav;H. Levenne;S. Stathopoulos;R. Ramesh;S. Kumar;T. Prodromakis

{"title":"Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing","authors":"D. Yadav;H. Levenne;S. Stathopoulos;R. Ramesh;S. Kumar;T. Prodromakis","doi":"10.1109/TED.2025.3547291","DOIUrl":null,"url":null,"abstract":"In this study, we report binary resistive and capacitive switching in hafnium oxide (HfOX) memristors. Given that annealed devices are widely recognized in the literature for exhibiting improved switching properties, we compared the behavior of as-deposited and annealed samples. Both devices exhibit pinched hysteresis with bipolar switching; however, annealed devices show significantly enhanced <sc>ON</small>/<sc>OFF</small> ratios for both resistive (1:100) and capacitive (1:3) states. The enhanced performance is attributed to post-deposition annealing at 400 °C, which induces a monoclinic phase and hence results in a film that exhibits a mixed amorphous and crystalline phase. To investigate the dynamic, frequency-dependent characteristics of these devices, we performed impedance spectroscopy (IS) analysis to get a Bode and Nyquist plots. The Bode plot indicates that these devices function as tuneable low-pass filters, with as-deposited devices providing a bandwidth of 0.82 MHz and annealed devices exhibiting a significantly expanded bandwidth of 9.43 MHz. The Nyquist plots reveal the presence of a constant phase element (CPE) in both devices, with a stronger presence in annealed devices. The modeled parameters align well with experimental data within acceptable error margins. In addition, LTspice simulations verify the model and the presence of nonideal parameters. Our comprehensive study underscores the potential of HfOX memristors as reliable and tuneable memcapacitors, exhibiting improved performance for annealed devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2271-2277"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10937260/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, we report binary resistive and capacitive switching in hafnium oxide (HfOX) memristors. Given that annealed devices are widely recognized in the literature for exhibiting improved switching properties, we compared the behavior of as-deposited and annealed samples. Both devices exhibit pinched hysteresis with bipolar switching; however, annealed devices show significantly enhanced ON/OFF ratios for both resistive (1:100) and capacitive (1:3) states. The enhanced performance is attributed to post-deposition annealing at 400 °C, which induces a monoclinic phase and hence results in a film that exhibits a mixed amorphous and crystalline phase. To investigate the dynamic, frequency-dependent characteristics of these devices, we performed impedance spectroscopy (IS) analysis to get a Bode and Nyquist plots. The Bode plot indicates that these devices function as tuneable low-pass filters, with as-deposited devices providing a bandwidth of 0.82 MHz and annealed devices exhibiting a significantly expanded bandwidth of 9.43 MHz. The Nyquist plots reveal the presence of a constant phase element (CPE) in both devices, with a stronger presence in annealed devices. The modeled parameters align well with experimental data within acceptable error margins. In addition, LTspice simulations verify the model and the presence of nonideal parameters. Our comprehensive study underscores the potential of HfOX memristors as reliable and tuneable memcapacitors, exhibiting improved performance for annealed devices.

查看原文本刊更多论文

氧化铪的阻抗谱：忆阻和忆容开关的退火

在这项研究中，我们报道了氧化铪（HfOX）记忆电阻器中的二元电阻和电容开关。鉴于退火器件在文献中被广泛认可为表现出改善的开关性能，我们比较了沉积和退火样品的行为。两种器件在双极开关时均表现出挤压迟滞；然而，退火后的器件在电阻（1:100）和电容（1:3）状态下都显示出显着提高的开/关比。性能的增强是由于在400°C下沉积后退火，引起单斜相，从而导致薄膜呈现出非晶相和结晶相的混合。为了研究这些器件的动态、频率相关特性，我们进行了阻抗谱（IS）分析，得到了Bode和Nyquist图。波德图表明，这些器件的功能是可调谐的低通滤波器，沉积器件提供0.82 MHz的带宽，退火器件显示出9.43 MHz的显著扩展带宽。奈奎斯特图显示两种器件中都存在恒定相元（CPE），在退火器件中存在更强的恒相元。在可接受的误差范围内，模型参数与实验数据很好地吻合。此外，LTspice仿真验证了模型和非理想参数的存在。我们的综合研究强调了HfOX忆阻器作为可靠和可调谐的忆阻器的潜力，在退火器件中表现出更好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.