A Novel High-Efficiency V-Band Coaxial Transit Time Oscillator With a Low Guiding Magnetic Field

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-20 DOI:10.1109/TED.2025.3549712

Zulong Chen;Lei Wang;Junpu Ling;Lili Song;Juntao He;Xingfu Gao

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Abstract

In this article, a V-band millimeter-wave relativistic high-power microwave (HPM) transit time oscillator is investigated, which is capable of operating with high efficiency under a low guiding magnetic field. To ensure the effectiveness of microwave extraction from the electron beam’s energy, a multimode operation mechanism is adopted in the traveling wave extractor. In the meantime, to improve the modulation effect of the electron beam, a two-stage buncher is designed. Furthermore, to optimize the phase relationship between the electron beam and the axial electric field in the cavity, a resonant cavity is added between the reflector and the first buncher, thus the beam-wave interaction can be enhanced. Finally, particle-in-cell (PIC) simulation results confirm that the novel relativistic V-band coaxial transit time oscillator can output 796 MW of microwave at a voltage of 391 kV, a current of 4.87 kA, and a guiding magnetic field of 1.0 T, respectively. This corresponds to a high efficiency of 41.8%, which is a significant improvement in the efficiency of the V-band HPM sources under low magnetic fields.

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一种新型高效率低导向磁场v波段同轴渡越时间振荡器

本文研究了一种v波段毫米波相对论型高功率微波（HPM）过境时间振荡器，该振荡器能够在低引导磁场下高效工作。为了保证微波提取电子束能量的有效性，行波提取器采用了多模工作机构。同时，为了提高电子束的调制效果，设计了两级聚束器。此外，为了优化电子束与腔内轴向电场的相位关系，在反射器和第一聚束器之间增加了谐振腔，从而增强了束波相互作用。最后，粒子池（PIC）仿真结果证实，在391 kV电压、4.87 kA电流和1.0 T引导磁场下，该新型相对论性v波段同轴传输时间振荡器可输出796 MW的微波。这相当于41.8%的高效率，这是v波段HPM源在低磁场下效率的显著提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.