Experimental Validation of Current Distribution in Intense Relativistic Electron Beams From a Coaxial Dual-Ring Cathode

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-18 DOI:10.1109/TED.2025.3548999

Xingfu Gao;Lili Song;Junpu Ling;Fanbo Zeng;Xinbing Cheng;Rong Chen;Lei Wang;Juntao He

引用次数: 0

Abstract

This article presents a comprehensive simulation study and the first experimental investigation of a coaxial nested dual-ring cathode (CNDC) for dual-frequency high-power microwave (HPM) generation. Operating under a low solenoidal guiding magnetic field of 0.6 T, the CNDC successfully emitted and transmitted dual-ring intense relativistic electron beams (IREBs) with high transmission efficiencies. The experimental results closely validated the predictions of particle-in-cell (PIC) simulations, with total emission currents measured at approximately 15.8 kA, aligning well with the 15.6 and 15.5 kA predicted by the 2-D and 3-D simulations, respectively. Furthermore, the experimentally observed beam current distribution between the outer and inner rings closely adhered to design expectations, demonstrating the stability and reliability of the CNDC for dual-frequency HPM applications.

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同轴双环阴极强相对论电子束电流分布的实验验证

本文对用于双频大功率微波（HPM）产生的同轴嵌套双环阴极（CNDC）进行了全面的仿真研究和首次实验研究。在0.6 T的低螺线管引导磁场下，CNDC成功发射并传输了双环强相对论电子束（IREBs），传输效率高。实验结果证实了PIC模拟的预测，总发射电流约为15.8 kA，与二维和三维模拟分别预测的15.6和15.5 kA非常吻合。此外，实验观察到的外环和内环之间的光束电流分布与设计预期非常接近，证明了CNDC在双频HPM应用中的稳定性和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.