A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-03-20 DOI:10.1109/TED.2025.3549745

Xuebin Wang;Kaifei Chen;Yutao Li;Jingsi Qiao;Yuanxiao Ma;Chengji Jin;Jixuan Wu;Jiezhi Chen;Masaharu Kobayashi;Guanhua Yang;Ling Li;Fei Mo;Yeliang Wang

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引用次数: 0

Abstract

InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential (

$\varphi _{\text {S}}$

) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.

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面向亚阈值特性依赖存储器应用的IGZO沟道场效应管物理紧凑模型

InGaZnO （IGZO）晶体管及其相关的存储应用近年来引起了研究人员的极大兴趣。在本文中，我们考虑一个高斯分布的浅层供体作为IGZO通道中的正电荷，以精确地分析亚阈值运算的表面电位（$\varphi _{\text {S}}$）。同时，提出了一种新的IGZO沟道表面电位分析方法，该方法考虑了短沟道内漏极和源极电场对栅极电荷增强的影响，同时考虑了由于缺少空穴而产生的浮体效应。所提出的紧凑模型与TCAD仿真和实验结果在各操作区域的器件变化方面具有良好的一致性。最后，对IGZO铁电场电晶体管（FeFET）和2T0C IGZO FET DRAM进行蒙特卡罗模拟，考虑器件和材料特性的变化，显示了该模型在存储器应用电路级模拟中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.