Systematic Investigation on the Performance and Reliability of 4H-SiC MOSFETs With Nonkiller Epitaxial Morphological Defects

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-17 DOI:10.1109/TED.2025.3556053

Yibo Zhang;Xiaoyan Tang;Hao Yuan;Jingkai Guo;Haohang Yang;Yu Zhou;Fengyu Du;Keyu Liu;Zhiwen Zhang;Chenyu Wang;Aijun Zhang;Qingwen Song;Chao Han;Yuming Zhang

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引用次数: 0

Abstract

Epitaxial morphological defects in silicon carbide (SiC) MOSFETs can induce device failures. While chip probing (CP) methods can identify and distinguish many failed devices, some nonkiller epitaxial morphological defects often pass the initial screening, leading to early failures in practical applications. This study investigates the impact of SiC morphological defects on device performance, short-circuit (SC) reliability, and long-term reliability. Through a combination of experimental analysis and TCAD simulations, strong evidence is provided for the diverse effects of morphological defects on device performance. The results reveal that the Carrot-Defect significantly degrades the quality of the gate oxide, leading to premature failures in long-term reliability and SC tests. In contrast, the Triangle-Defect primarily affects the blocking capability of the device, while the SC performance of devices with such morphological defects that pass screening does not significantly deteriorate.

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具有非杀伤外延形态缺陷的4H-SiC mosfet的性能和可靠性的系统研究

碳化硅（SiC） mosfet的外延形态缺陷会导致器件失效。虽然芯片探测（CP）方法可以识别和区分许多失效器件，但一些非杀手外延形态缺陷往往通过初始筛选，导致实际应用中的早期失效。本研究探讨了碳化硅形态缺陷对器件性能、短路可靠性和长期可靠性的影响。通过实验分析和TCAD仿真相结合，有力地证明了形态缺陷对器件性能的多种影响。结果表明，胡萝卜缺陷显著降低了栅极氧化物的质量，导致长期可靠性和SC测试中的过早失效。相反，三角形缺陷主要影响器件的阻塞能力，而具有这种形态缺陷的器件通过筛选后的SC性能没有明显下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.