Modeling and Characterization of Polarization Switching for Ferroelectric HZO Considering Domain Propagation Effect

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-16 DOI:10.1109/TED.2025.3556045

Po-Yi Lee;Kuo-Yu Hsiang;Gui-Huai Chen;Hau-Ting Tsai;Min Hung Lee;Pin Su

引用次数: 0

Abstract

This work comprehensively models and characterizes the polarization switching of ferroelectric (FE) HZO considering the domain propagation effect. We first present a SPICE framework that can solve the time-dependent Ginzburg-Landau (TDGL) equation, based on which the domain propagation effect through multidomain interaction can be examined. Furthermore, we incorporate the domain propagation effect into an NLS-based model for polycrystalline FE HZO. We have also experimentally characterized the polarization switching of FE HZO from 300 down to 80 K. Our results indicate that the domain propagation effect plays a nonnegligible role for the switching of FE HZO under the temperature of 80 K, and our model is capable of capturing the distinct polarization-switching characteristics due to domain propagation.

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考虑域传播效应的铁电HZO极化开关建模与表征

本文对考虑畴传播效应的铁电（FE） HZO的极化开关进行了全面的建模和表征。我们首先提出了一个SPICE框架，该框架可以求解时间相关的金兹堡-朗道（TDGL）方程，在此基础上可以通过多域相互作用来检验域传播效应。此外，我们将畴传播效应纳入到多晶FE HZO的nls模型中。我们还通过实验表征了FE HZO在300 ~ 80k之间的极化开关。研究结果表明，在80 K温度下，畴传播效应对FE HZO的开关起着不可忽视的作用，并且我们的模型能够捕捉到由于畴传播而产生的明显的极化开关特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.