Optimized semi-physical EKV model for simulation of SiC MOSFETs

Abstract

This paper presents a detailed static characteristic model based on the EKV (Enz Krummenacher and Vittoz) model for 1200 V SiC MOSFETs in power electronic applications, with a specific focus on $I_{\mathrm{ds}}\left(V_{\mathrm{gs}}\right)$ at different temperatures. The study explores the nuanced behavior parameters in the model and provides a subset of results in this publication. Additionally, the methodology of parameter fitting for the model is elaborated upon, providing insights into the process of refining the model to match real-world behaviors. To validate the steady state characteristics, this paper integrates MOSFET capacitance modeling, internal diode characteristics, and the influence of parasitic elements in the printed circuit board (PCB) for dynamic simulations and comparison with experimental tests conducted. Notably, the model incorporates the physical behavior of the device and can facilitates the integration of drift models for specific parameters, such as threshold voltage $V_{\mathrm{th}}$, on state resistance $R_{\mathrm{ds},\mathrm{on}}$. Additionally, with the integration of aging parameters models the current sharing in parallelized devices used in power electronics can be predicted through simulation with the EKV model. This integration can be crucial for establishing models for predictive maintenance of converters equipped with SiC MOSFETs.