Reliability assessment of SiC power MOSFETs in dynamic reverse bias test

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-05-16 DOI:10.1016/j.microrel.2025.115770

Alessandro Sitta, Giuseppe Mauromicale, Michele Fiore, Michele Calabretta

引用次数: 0

Abstract

Novel reliability tests are being developed for power semiconductor devices, especially for those based on wide band-gap materials, such as silicon carbide (SiC), in electric vehicles field. More specifically, because of the automotive environment and higher permissible slew rates in SiC devices, it is important to assess reliability in harsh conditions. Potentially related to this test, incomplete ionization of the dopants and edge termination fails are reported for SiC devices, in consequence of fast transients, but aging phenomena and parameters drift have not been deeply investigated. The purpose of this work is to evaluate the DRB test in detail, with a reliability perspective.

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SiC功率mosfet在动态反偏试验中的可靠性评估

在电动汽车领域，针对功率半导体器件，特别是基于碳化硅（SiC）等宽禁带材料的器件，正在开发新的可靠性测试方法。更具体地说，由于汽车环境和SiC器件的允许转换率更高，因此评估恶劣条件下的可靠性非常重要。可能与该测试相关的是，由于快速瞬态，SiC器件中掺杂剂的不完全电离和边缘终止失败被报道，但老化现象和参数漂移尚未得到深入研究。本研究的目的是从信度的角度对DRB测试进行详细的评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.