Extremely High ESD Failure Voltage of RESURF LDMOS Devices for ESD Resilient Driver Applications

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-09 DOI:10.1109/TED.2025.3556114

Aakanksha Mishra;M. Monishmurali;B. Sampath Kumar;Shaik Ahamed Suzaad;Shubham Kumar;Kiran Pote Sanjay;Amit Kumar Singh;Avinash Singh;Ankur Gupta;Mayank Shrivastava

引用次数: 0

Abstract

This work reports an extremely high ESD failure voltage in the transmission line pulse (TLP) characteristics of the laterally diffused metal-oxide-semiconductor (LDMOS) devices, while investigating a correlation between the critical voltage and filament formation. A high failure voltage enables an additional immunity to ESD damage by providing extra protection against the overvoltage stress in high-voltage (HV) I/O applications. The ESD behavior of LDMOS devices in the presence of reduced surface field (RESURF)-implant in the drift region is investigated in detail. Furthermore, an approach to drift region design and electric field engineering that affects this high failure voltage in RESURF LDMOS devices is discussed, using measurement and 3-D TCAD simulation.

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用于ESD弹性驱动器的超高ESD失效电压的RESURF LDMOS器件

本研究报告了横向扩散金属氧化物半导体（LDMOS）器件的传输线脉冲（TLP）特性中极高的ESD失效电压，同时研究了临界电压与灯丝形成之间的相关性。高失效电压通过在高压（HV） I/O应用中提供额外的过电压应力保护，从而提高了对ESD损害的抗扰度。详细研究了在漂移区存在还原表面场（RESURF）植入时LDMOS器件的ESD行为。此外，通过测量和三维TCAD仿真，讨论了影响重熔LDMOS器件高失效电压的漂移区设计和电场工程方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.