Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-05-15 DOI:10.1016/j.microrel.2025.115786

L. Hein, P. Heimler, T. Lentzsch, J. Lutz, T. Basler

引用次数: 0

Abstract

Power cycling tests (PCTs) are important for evaluating the lifetime of power electronic devices. Discrete SiC MOSFETs with improved packaging and interconnection technology have proven high reliability but also show a certain spread in lifetime. For testing those in an appropriate test duration, a high acceleration factor in the test is required. In this paper, a PCT with hybrid testing of the body diode and channel in the reverse direction of discrete SiC MOSFETs has been performed. Depending on the channel contribution, this allows a reduced load current and still a positive temperature coefficient. With this strategy, similar failures to standard PCTs were observed. The test results are compared with standard PCTs in forward and pure body diode mode. A comparable lifetime to the reference test is achieved for an operating regime with a positive temperature coefficient.

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不同工作模式下分立SiC mosfet的先进功率循环测试策略及其对寿命的影响

功率循环试验（PCTs）是评估电力电子设备寿命的重要手段。采用改进的封装和互连技术的离散SiC mosfet已被证明具有高可靠性，但也显示出一定的寿命扩展。为了在适当的测试持续时间内进行测试，需要在测试中使用高加速因子。本文对离散SiC mosfet的主体二极管和沟道进行了反向混合测试。根据通道的贡献，这允许减少负载电流，仍然是一个正的温度系数。采用这种策略，观察到与标准pct类似的失败。测试结果与标准pct在正向和纯体二极管模式下进行了比较。在具有正温度系数的工作状态下，实现了与参考试验相当的寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.