L. Anoldo , G. Tosto , Z. Dahrouch , S. Bevilacqua , E. Schroer , S. Patanè , A. Russo
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引用次数: 0
Abstract
This article presents a reliability study on conventional 650 V SiC MOSFETs subject to carrot-like defects under High Temperature Reverse Bias (HTRB) stress. The instabilities of some parameters are monitored, and the drift analysis of the most critical one is presented. The study aims to isolate the impact of carrot defects by comparing devices with these defects to those without and the analysis of the electrical characteristics on samples subjected to HTRB shows an evident difference between devices with and without defects.
本文研究了高温反向偏置(HTRB)应力下存在胡萝卜状缺陷的650 V SiC mosfet的可靠性。对一些参数的不稳定性进行了监测,并对其中最关键的参数进行了漂移分析。本研究的目的是通过比较有缺陷和没有缺陷的设备来隔离胡萝卜缺陷的影响,对HTRB样品的电特性分析表明,有缺陷和没有缺陷的设备之间存在明显差异。
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.