{"title":"An electrolyte-gate vertical TFET pH sensor design and simulation analysis","authors":"Dena N. Qasim Agha","doi":"10.1016/j.measurement.2025.117790","DOIUrl":null,"url":null,"abstract":"<div><div>This article examined a vertical Tunnel Field Effect transistor (TFET) based pH sensor with open and closed cavities with heterojunction Gallium Antimonide/Silicon (GaSb/Si) source. The addition of GaSb as a source increases the tunneling efficiency, resulting in a high tunneling current for the TFET pH sensor. The compound material (GaSb) increases the carrier current density, which leads to an increase in the sensitivity of the pH sensor. The ATLAS simulator used the density of states of conduction band (Nc) and valance band (Nv) to evaluate the change of pH in bio electrolyte solution. The density of states for an open and closed cavity has been evaluated with pH modelling of electrolyte solution. The sensitivity of the closed cavity and open cavity configuration is determined along with other electrical parameters like electric field, energy band bending, drain current, transconductance and sensitivities. Both the open and closed cavity configurations showed variation in the electrical behavior. The sensitivity is approximately three times the Nernst limit (59 mV/pH) for the closed (open) cavity voltage sensitivity of 228 mV/pH (287 mV/pH).</div></div>","PeriodicalId":18349,"journal":{"name":"Measurement","volume":"253 ","pages":"Article 117790"},"PeriodicalIF":5.2000,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Measurement","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0263224125011492","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This article examined a vertical Tunnel Field Effect transistor (TFET) based pH sensor with open and closed cavities with heterojunction Gallium Antimonide/Silicon (GaSb/Si) source. The addition of GaSb as a source increases the tunneling efficiency, resulting in a high tunneling current for the TFET pH sensor. The compound material (GaSb) increases the carrier current density, which leads to an increase in the sensitivity of the pH sensor. The ATLAS simulator used the density of states of conduction band (Nc) and valance band (Nv) to evaluate the change of pH in bio electrolyte solution. The density of states for an open and closed cavity has been evaluated with pH modelling of electrolyte solution. The sensitivity of the closed cavity and open cavity configuration is determined along with other electrical parameters like electric field, energy band bending, drain current, transconductance and sensitivities. Both the open and closed cavity configurations showed variation in the electrical behavior. The sensitivity is approximately three times the Nernst limit (59 mV/pH) for the closed (open) cavity voltage sensitivity of 228 mV/pH (287 mV/pH).
期刊介绍:
Contributions are invited on novel achievements in all fields of measurement and instrumentation science and technology. Authors are encouraged to submit novel material, whose ultimate goal is an advancement in the state of the art of: measurement and metrology fundamentals, sensors, measurement instruments, measurement and estimation techniques, measurement data processing and fusion algorithms, evaluation procedures and methodologies for plants and industrial processes, performance analysis of systems, processes and algorithms, mathematical models for measurement-oriented purposes, distributed measurement systems in a connected world.