A 3-D Phased Array Transmitter With Circuit and Package Codesign of a Phase Shifter and a Power Amplifier at W Band

IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhe Zhao;Dong-Xin Ni;Wang-Wen Xu;Yin-Shan Huang;Cheng-Rui Zhang;Liang Zhou
{"title":"A 3-D Phased Array Transmitter With Circuit and Package Codesign of a Phase Shifter and a Power Amplifier at W Band","authors":"Zhe Zhao;Dong-Xin Ni;Wang-Wen Xu;Yin-Shan Huang;Cheng-Rui Zhang;Liang Zhou","doi":"10.1109/TCPMT.2025.3553253","DOIUrl":null,"url":null,"abstract":"This study proposes the design, fabrication, and testing of a 3-D integrated transmitter operating at the W band. Detailed analyses of the performance variations before and after packaging of the phase shifter (PS) and power amplifier (PA) are provided, along with specific design processes. The circuit and packaging of the PS and PA are codesigned to maintain their performance and minimize proximity effects during 3-D integration at millimeter-wave frequencies. The PS achieves a −6.4-dB loss at 100GHz, with a phase root mean square (rms) error of 1.11° and a gain rms error of 0.855dB. The PA achieves a maximum gain of 19.5dB at 103GHz, with a bandwidth from 99.2 to 106.7GHz and a saturated output power of 13dBm. Both the PS and PA are individually packaged using proprietary silicon-based micro-electro-mechanical system (MEMS) through-silicon-trench technology and multilayer photosensitive composite film. Finally, a 3-D integration of the transmitter system is realized using microbumps based on 3-D transition structures.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1060-1071"},"PeriodicalIF":3.0000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10935644/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This study proposes the design, fabrication, and testing of a 3-D integrated transmitter operating at the W band. Detailed analyses of the performance variations before and after packaging of the phase shifter (PS) and power amplifier (PA) are provided, along with specific design processes. The circuit and packaging of the PS and PA are codesigned to maintain their performance and minimize proximity effects during 3-D integration at millimeter-wave frequencies. The PS achieves a −6.4-dB loss at 100GHz, with a phase root mean square (rms) error of 1.11° and a gain rms error of 0.855dB. The PA achieves a maximum gain of 19.5dB at 103GHz, with a bandwidth from 99.2 to 106.7GHz and a saturated output power of 13dBm. Both the PS and PA are individually packaged using proprietary silicon-based micro-electro-mechanical system (MEMS) through-silicon-trench technology and multilayer photosensitive composite film. Finally, a 3-D integration of the transmitter system is realized using microbumps based on 3-D transition structures.
W波段移相器和功率放大器电路和封装协同设计的三维相控阵发射机
本研究提出了一种工作在W波段的三维集成发射机的设计、制造和测试。详细分析了移相器(PS)和功率放大器(PA)封装前后的性能变化,并给出了具体的设计过程。PS和PA的电路和封装是共同设计的,以保持其性能,并最大限度地减少毫米波频率下3d集成期间的接近效应。该PS在100GHz时的损耗为−6.4 db,相位均方根误差为1.11°,增益均方根误差为0.855dB。该放大器在103GHz时最大增益为19.5dB,带宽范围为99.2 ~ 106.7GHz,饱和输出功率为13dBm。PS和PA均采用专有的硅基微机电系统(MEMS)通硅沟槽技术和多层光敏复合薄膜进行单独封装。最后,利用基于三维过渡结构的微凸点实现了发射机系统的三维集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
4.70
自引率
13.60%
发文量
203
审稿时长
3 months
期刊介绍: IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信