Enhanced dielectric properties by doping Jahn-Teller Mn ions in ilmenite-type Zn0.7Mg0.3TiO3 ceramics

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-09 DOI:10.1016/j.mssp.2025.109647

Liangchen Fan, Yuanxun Li, Fuyu Li, Jie Li, Kai Gu, Yulong Liao

{"title":"Enhanced dielectric properties by doping Jahn-Teller Mn ions in ilmenite-type Zn0.7Mg0.3TiO3 ceramics","authors":"Liangchen Fan, Yuanxun Li, Fuyu Li, Jie Li, Kai Gu, Yulong Liao","doi":"10.1016/j.mssp.2025.109647","DOIUrl":null,"url":null,"abstract":"<div><div>The study aimed to explore the impact of substituting Ti4+ with Jahn-active Mn ions on the structural and dielectric characteristics of ilmenite Zn0.7Mg0.3TiO3. Polycrystalline samples of Zn0.7Mg0.3Ti1-xMnxO3 (x ≤ 0.12) were synthesized using the solid-phase method at a medium temperature of 1150 °C. Results indicate that the microwave dielectric properties (εr = 20.7, Q × f = 50,808 GHz, τf = −26.7 ppm/°C) of Zn0.7Mg0.3Ti1-xMnxO3 ceramics significantly improve with the incorporation of Jahn-Teller Mn ions, particularly in terms of dielectric loss and temperature drift coefficient. Quantitative XPS analysis and Raman drift analysis further supports the notion that the Jahn-Teller distortion induced by the Mn3+ cation affects the Q × f value and thermal stability. This approach of leveraging Jahn-Teller distortion for enhancing material properties introduces a novel perspective to the development and utilization of electronic materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109647"},"PeriodicalIF":4.2000,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125003841","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The study aimed to explore the impact of substituting Ti⁴⁺ with Jahn-active Mn ions on the structural and dielectric characteristics of ilmenite Zn_0.7Mg_0.3TiO₃. Polycrystalline samples of Zn_0.7Mg_0.3Ti_1-xMn_xO₃ (x ≤ 0.12) were synthesized using the solid-phase method at a medium temperature of 1150 °C. Results indicate that the microwave dielectric properties (ε_r = 20.7, Q × f = 50,808 GHz, τ_f = −26.7 ppm/°C) of Zn_0.7Mg_0.3Ti_1-xMn_xO₃ ceramics significantly improve with the incorporation of Jahn-Teller Mn ions, particularly in terms of dielectric loss and temperature drift coefficient. Quantitative XPS analysis and Raman drift analysis further supports the notion that the Jahn-Teller distortion induced by the Mn³⁺ cation affects the Q × f value and thermal stability. This approach of leveraging Jahn-Teller distortion for enhancing material properties introduces a novel perspective to the development and utilization of electronic materials.

查看原文本刊更多论文

掺杂Jahn-Teller Mn离子增强钛铁矿型Zn0.7Mg0.3TiO3陶瓷的介电性能

本研究旨在探讨用jahn活性Mn离子取代Ti4+对钛铁矿Zn0.7Mg0.3TiO3结构和介电特性的影响。在1150℃的介质温度下，采用固相法合成了Zn0.7Mg0.3Ti1-xMnxO3 （x≤0.12）多晶样品。结果表明，加入Jahn-Teller Mn离子后，Zn0.7Mg0.3Ti1-xMnxO3陶瓷的微波介电性能（εr = 20.7, Q × f = 50,808 GHz, τf =−26.7 ppm/°C）显著提高，特别是介电损耗和温度漂移系数显著提高。定量的XPS分析和拉曼漂移分析进一步支持了由Mn3+阳离子引起的Jahn-Teller畸变影响Q × f值和热稳定性的观点。这种利用扬-泰勒扭曲来增强材料性能的方法为电子材料的开发和利用引入了一个新的视角。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.