Enhancing AC degradation modeling by considering the degradation profile in SiON pMOSFETs

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-05-09 DOI:10.1016/j.microrel.2025.115771

Yeohyeok Yun

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引用次数: 0

Abstract

This paper presents a method to enhance the prediction accuracy of SiON pMOSFET degradation under AC stress. The degradation occurring in the preceding stage (pre-ON or OFF-state) is analyzed by extract the V_th degradation profile, which influences the subsequent stage (post-OFF or ON-state). As a result, the negative charge generated by stress in the pre-OFF-state increased the gate oxide field in the post-ON-state, accelerating the degradation of the post-ON-state. This phenomenon became more localized at the drain edge. The positive charge generated by pre-ON-state non-uniformly altered the electric field between the gate and channel, accelerating degradation due to post-OFF-state, especially at the source and drain region. Furthermore, integrating post-ON and OFF-state degradation models for each channel region during the effective period of AC stress improved the accuracy of V_th degradation modeling for SiON pMOSFETs under various duty ratios of AC stress.

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通过考虑pmosfet的退化特性来增强交流退化建模

本文提出了一种提高交流应力下pMOSFET退化预测精度的方法。通过提取影响后续阶段（关后或开后状态）的第v个降解曲线来分析前一阶段（开前或关前状态）发生的降解。因此，在pre- off状态下应力产生的负电荷增加了后on状态下的栅氧化场，加速了后on状态的降解。这种现象在排水边缘变得更加局限。前置on状态产生的正电荷不均匀地改变了栅极和沟道之间的电场，加速了后off状态导致的退化，特别是在源极和漏极区域。此外，集成交流应力有效期内各通道区域的on后和off状态退化模型，提高了在不同交流应力占空比下SiON pmosfet的Vth退化模型的准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.