{"title":"An analytical model for calculating transient temperatures of 3-D integrated system considering heat capacity variations","authors":"Xin Jin, Junqin Zhang, Luhao Zhai, Wenting Chen, Guangbao Shan, Yintang Yang","doi":"10.1016/j.microrel.2025.115777","DOIUrl":null,"url":null,"abstract":"<div><div>Constant pressure heat capacity is an important property that affects thermal diffusivity when calculating the transient temperature of three-dimensional (3-D) integrated systems, but current analytical models usually do not consider the effect of heat capacity. Acknowledging the temperature-dependent nature of heat capacity for materials within the AlN-substrate-based 3-D integrated system, a novel anisotropic transient thermal analytical model that takes into account the heat capacity's temperature-dependent variation is proposed. Initially, the AlN substrate, integrated with a through ceramic via (TCV) array, is modeled as a homogenized structure utilizing the equivalent thermal conductivity (ETC) model. Subsequently, an anisotropic transient thermal analytical model based on Fourier series was established, and the heat capacity values of various materials in the analytical model were updated in real time. The analytical model was compared with the finite element method (FEM), showing a relative error of about 0.73 % in the transient peak temperature predictions, which indicates a high level of agreement with the FEM results. Furthermore, the time required to extract the transient peak temperature within a 10-s simulation using our analytical model was only 0.43 s, which is 885 times faster than the FEM. This demonstrates that the proposed model excels in computational precision and velocity, offering a reliable and efficient strategy for predicting the thermal management needs of 3-D integrated systems.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115777"},"PeriodicalIF":1.6000,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001908","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Constant pressure heat capacity is an important property that affects thermal diffusivity when calculating the transient temperature of three-dimensional (3-D) integrated systems, but current analytical models usually do not consider the effect of heat capacity. Acknowledging the temperature-dependent nature of heat capacity for materials within the AlN-substrate-based 3-D integrated system, a novel anisotropic transient thermal analytical model that takes into account the heat capacity's temperature-dependent variation is proposed. Initially, the AlN substrate, integrated with a through ceramic via (TCV) array, is modeled as a homogenized structure utilizing the equivalent thermal conductivity (ETC) model. Subsequently, an anisotropic transient thermal analytical model based on Fourier series was established, and the heat capacity values of various materials in the analytical model were updated in real time. The analytical model was compared with the finite element method (FEM), showing a relative error of about 0.73 % in the transient peak temperature predictions, which indicates a high level of agreement with the FEM results. Furthermore, the time required to extract the transient peak temperature within a 10-s simulation using our analytical model was only 0.43 s, which is 885 times faster than the FEM. This demonstrates that the proposed model excels in computational precision and velocity, offering a reliable and efficient strategy for predicting the thermal management needs of 3-D integrated systems.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.