An analytical model for calculating transient temperatures of 3-D integrated system considering heat capacity variations

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Xin Jin, Junqin Zhang, Luhao Zhai, Wenting Chen, Guangbao Shan, Yintang Yang
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引用次数: 0

Abstract

Constant pressure heat capacity is an important property that affects thermal diffusivity when calculating the transient temperature of three-dimensional (3-D) integrated systems, but current analytical models usually do not consider the effect of heat capacity. Acknowledging the temperature-dependent nature of heat capacity for materials within the AlN-substrate-based 3-D integrated system, a novel anisotropic transient thermal analytical model that takes into account the heat capacity's temperature-dependent variation is proposed. Initially, the AlN substrate, integrated with a through ceramic via (TCV) array, is modeled as a homogenized structure utilizing the equivalent thermal conductivity (ETC) model. Subsequently, an anisotropic transient thermal analytical model based on Fourier series was established, and the heat capacity values of various materials in the analytical model were updated in real time. The analytical model was compared with the finite element method (FEM), showing a relative error of about 0.73 % in the transient peak temperature predictions, which indicates a high level of agreement with the FEM results. Furthermore, the time required to extract the transient peak temperature within a 10-s simulation using our analytical model was only 0.43 s, which is 885 times faster than the FEM. This demonstrates that the proposed model excels in computational precision and velocity, offering a reliable and efficient strategy for predicting the thermal management needs of 3-D integrated systems.
考虑热容变化的三维集成系统瞬态温度分析模型
在计算三维集成系统的瞬态温度时,恒压热容是影响热扩散系数的重要性质,但目前的分析模型通常没有考虑热容的影响。考虑到基于aln基板的三维集成系统中材料的热容随温度变化的特性,提出了一种考虑热容随温度变化的各向异性瞬态热分析模型。首先,利用等效导热系数(ETC)模型,将集成了陶瓷通孔(TCV)阵列的AlN衬底建模为均匀化结构。随后,建立了基于傅里叶级数的各向异性瞬态热分析模型,并实时更新了分析模型中各种材料的热容值。将分析模型与有限元法(FEM)进行了比较,结果表明,对瞬态峰值温度的预测相对误差约为0.73%,与有限元计算结果吻合较好。此外,利用我们的分析模型在10-s的模拟时间内提取瞬态峰值温度所需的时间仅为0.43 s,比FEM快885倍。结果表明,该模型具有较高的计算精度和计算速度,为三维集成系统的热管理需求预测提供了可靠、有效的策略。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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