A Low Static-Power D Flip-Flop With Unipolar Thin Film Transistors on a Flexible Substrate

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shubham Ranjan;Sparsh Kapar;Czang-Ho Lee;William Wong;Manoj Sachdev
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Abstract

There is increasing interest in affordable and flexible electronics, driven by the need for displays, conformable body sensors, and Internet-of-Things (IoT) gadgets. Amorphous silicon (a-Si:H), transition metal oxides, and organic thin-film transistors (TFTs) have demonstrated cost-effective large-scale production. As TFTs are typically unipolar in nature, they pose challenges for implementing CMOS-like circuits. Conventional methods to realize circuits in these technologies often lead to restricted voltage swing and excessive direct path current. While several methods have been proposed to counter the voltage swing issue, these methods fail to address the direct path current problem. This article presents low static-power D flip-flops (DFFs) using unipolar TFTs, which significantly reduces the direct path current. The proposed and conventional DFF designs were fabricated on a glass and flexible substrate using a-Si:H TFTs. Additionally, the impact of bending the flexible substrates was examined to assess the robustness and performance of the DFFs under mechanical strain. The measurement results show that the proposed design based DFF saves average total power by 79.8% compared to conventional design.
柔性衬底上单极薄膜晶体管的低静态功率D触发器
在显示器、舒适的身体传感器和物联网(IoT)设备需求的推动下,人们对经济实惠、灵活的电子产品的兴趣越来越大。非晶硅(a-Si:H)、过渡金属氧化物和有机薄膜晶体管(tft)已经证明具有成本效益的大规模生产。由于tft本质上通常是单极的,它们对实现类似cmos的电路提出了挑战。在这些技术中实现电路的传统方法常常导致电压摆幅受限和直流电流过大。虽然已经提出了几种方法来解决电压摆动问题,但这些方法无法解决直接路径电流问题。本文介绍了一种使用单极tft的低静态功率D触发器(dff),它可以显著降低直接通路电流。采用a- si:H tft在玻璃和柔性衬底上制作了所提出的DFF设计和传统DFF设计。此外,研究了弯曲柔性基板的影响,以评估dff在机械应变下的稳健性和性能。测试结果表明,与传统设计相比,基于DFF的设计平均总功耗节省79.8%。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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